Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Jingjian Ren"'
Publikováno v:
Applied Physics A. 111:719-724
A back-gated nonplanar floating gate device based on buried single triangular-shaped Si nanowire channel (width ∼40 nm) and embedded high-density uniform NiSi nano-dots (∼1.5×1012 cm−2) is demonstrated. Memory properties including memory windo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7a5a1195e6fd3e45707d7d757d10812
https://doi.org/10.1007/s00339-013-7641-3
https://doi.org/10.1007/s00339-013-7641-3
Publikováno v:
Applied Physics A. 107:971-975
An electrically pumped random laser diode was fabricated with a MgZnO/ZnO/MgZnO double heterostructure embedded in a ZnO pn junction. Gain can be achieved at very low-threshold current owing to exciton processes. Light closed loops are formed by rand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41b9d210ada183d23fc340b84cb371a0
https://doi.org/10.1007/s00339-012-6850-5
https://doi.org/10.1007/s00339-012-6850-5
Publikováno v:
Applied Physics A. 107:891-897
Unipolar resistive switching memory cells were fabricated using a Mg0.84Zn0.16O2−δ thin film, sandwiched between p+-Si (100) substrate and Cr/Au top electrodes. Electrical measurements showed a large memory window and memory window margin of 107 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0e30139b1a1cab8d834324d1624fed2
https://doi.org/10.1007/s00339-012-6815-8
https://doi.org/10.1007/s00339-012-6815-8
Publikováno v:
Solid-State Electronics. 67:23-26
NiSi nanocrystals of high density and good uniformity were synthesized by vapor–solid–solid growth in a gas source molecular beam epitaxy system using Si2H6 as Si precursor and Ni as catalyst. A metal–oxide–semiconductor memory device with Ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aceb66a2c716b72ad2a9c503b71b6f2
https://doi.org/10.1016/j.sse.2011.07.016
https://doi.org/10.1016/j.sse.2011.07.016
Autor:
Jingjian Ren, Guotong Du, Jiming Bian, Qiuju Feng, Shuoshi Li, Hongwei Liang, Lizhong Hu, Jingchang Sun, Jianlin Liu, Jianze Zhao
Publikováno v:
physica status solidi (a). 208:825-828
Sb-doped zinc oxide (ZnO) films grown by metal organic chemical vapor deposition (MOCVD) were investigated. The influence of Sb-doping concentration on the optical and structural properties of ZnO was investigated. The deep-level emission was suppres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67167db2f96e67e214c33ae74a7c6a56
https://doi.org/10.1002/pssa.201026659
https://doi.org/10.1002/pssa.201026659
Publikováno v:
IEEE Electron Device Letters. 33:1390-1392
A nonplanar Flash memory architecture with ultrahigh-density (~1.5 × 1012 cm-2) NiSi nanocrystals (NCs) as the floating gate is demonstrated using a triangular-shaped Si nanowire array as the memory transistor channel. The memory device shows good p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9528566c065c87cf9b65ca0666d1a802
https://doi.org/10.1109/led.2012.2206554
https://doi.org/10.1109/led.2012.2206554
Publikováno v:
IEEE Electron Device Letters. 32:1445-1447
Write-once-read-many-times memory cells were fabricated using ZnO thin film on p-Si (111) substrate. The off- and on-state resistance ratio is over 104 and can be well sustained for more than 100 years and perfectly endure reading cycles of 108 . The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82a0e105c36d859d3575dc8b14f2b4cd
https://doi.org/10.1109/led.2011.2162219
https://doi.org/10.1109/led.2011.2162219
Publikováno v:
ACS nano. 6(2)
Resistive memory is one of the most promising candidates for next-generation nonvolatile memory technology due to its variety of advantages, such as simple structure and low-power consumption. Bipolar resistive switching behavior was observed in epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40ebab7fd93d3ca6ef99d4401612091d
https://pubmed.ncbi.nlm.nih.gov/22257020
https://pubmed.ncbi.nlm.nih.gov/22257020
Publikováno v:
Conference on Lasers and Electro-Optics 2012.
We report electrically pumped Fabry-Perot (FP) type waveguide ultraviolet lasing from laser diodes that consist of Sb-doped p-type ZnO nanowires and n-type ZnO thin films. The diodes exhibit highly stable lasing at room temperature.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::401709d672efbd1eb63d39d6718c1d5b
https://doi.org/10.1364/cleo_si.2012.ctu2n.3
https://doi.org/10.1364/cleo_si.2012.ctu2n.3
Autor:
Jianlin Liu, Jingjian Ren, Huimei Zhou, Mario Olmedo, Koungmin Ryu, Ning Zhan, Chuan Wang, Chongwu Zhou
Publikováno v:
ACS nano. 5(10)
A memory structure based on self-aligned silicon nanocrystals (Si NCs) grown over Al(2)O(3)-covered parallel-aligned carbon nanotubes (CNTs) by gas source molecular beam epitaxy is reported. Electrostatic force microscopy characterizations directly p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd171b4b493e2a3c5ccfc23b245350b1
https://pubmed.ncbi.nlm.nih.gov/21902187
https://pubmed.ncbi.nlm.nih.gov/21902187