Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Jinggang Lu"'
Publikováno v:
Superlattices and Microstructures. 99:158-164
The impact of Al doping with the concentrations in the range of 0.01–0.1 ppmw on the performance of silicon wafers and solar cells is studied. The effective segregation coefficient of impurity keff of Al in Si is obtained as 0.0029, which is calcul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82872552a2599ac75c85e10f7f0aeef2
https://doi.org/10.1016/j.spmi.2016.03.021
https://doi.org/10.1016/j.spmi.2016.03.021
Publikováno v:
Electronic Materials Letters. 11:658-663
The impact of structural defect density on gettering of transition metal impurities during phosphorous emitter diffusion has been investigated using a pair of multi-crystalline silicon (mc-Si) wafers. Chromium (Cr) impurities incorporated during grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3cfcefedd4d017aa7db6e3ecb074095
https://doi.org/10.1007/s13391-015-5173-z
https://doi.org/10.1007/s13391-015-5173-z
Publikováno v:
Solar Energy Materials and Solar Cells. 95:3148-3151
We have demonstrated the effect of oxygen precipitation on the performance of Czochralski (CZ) silicon solar cells. The oxygen precipitates in silicon substrates were formed by a low–high two-step annealing. With the increase of oxygen precipitatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::894a4026b3d58fe259361820313e2bfa
https://doi.org/10.1016/j.solmat.2011.06.044
https://doi.org/10.1016/j.solmat.2011.06.044
Publikováno v:
ECS Transactions. 16:393-399
Three different characterization structures of MOS capacitor: Homo orientation, Hybrid orientation and hybrid orientation with shallow grain boundary were applied to evaluate the deep states at (110/100) grain boundary. With multiple frequency C-V an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93fc3745115f89c3673f3cef0f7726fa
https://doi.org/10.1149/1.2982892
https://doi.org/10.1149/1.2982892
Publikováno v:
ECS Transactions. 16:293-298
In this paper, defects and strain in SiGe heterostructures with 8, 13, 25, or 40 nm strained-Si (sSi) on top of 300 or 600 nm Si0.77Ge0.23 buffer have been examined. We found that threading dislocations (TDs) in the super-critical thickness sSi sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aa55acf6cdc84a414ee003fc254fd11
https://doi.org/10.1149/1.2986786
https://doi.org/10.1149/1.2986786
Publikováno v:
ECS Transactions. 16:433-440
In this article, the electrical activity of an interfacial grain boundary in a Direct-Silicon-Bonded wafer was examined by C-V and capacitance transient techniques using Al Schottky diodes. The samples consisted a 2.3 μm thick (110) Si layer on a p-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50c543575ca3e3cad3c140a2e549d566
https://doi.org/10.1149/1.2982897
https://doi.org/10.1149/1.2982897
Publikováno v:
Materials Science in Semiconductor Processing. 11:20-24
Carrier lifetime limitation defects in polycrystalline silicon ribbons have been examined in samples with high oxygen and carbon content. Infrared spectroscopy showed that essentially all supersaturated oxygen impurities precipitated within 1 h annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5d0cfb39c4ccbec24c2a9311acb7230
https://doi.org/10.1016/j.mssp.2008.07.001
https://doi.org/10.1016/j.mssp.2008.07.001
Publikováno v:
ECS Transactions. 11:39-46
As-grown and annealed SiGe/Si heterostructures have been examined by Deep Level Transient Spectroscopy and C-V techniques. Detailed analyses of trap density obtained by the two techniques showed that the density of acceptor trap levels was 4E14 cm-3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49b4bbb8433e5f4073251746535edd74
https://doi.org/10.1149/1.2778648
https://doi.org/10.1149/1.2778648
Publikováno v:
Solid State Phenomena. :627-630
The electrical activity of stacking faults (SFs) in multicrystalline sheet silicon has been examined by correlating EBIC(electron beam induced current), preferential defect etching, and microwave photo-conductance decay (PCD) lifetime measurements. F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33cdb4265bd5fc586dd46dae85fb38c1
https://doi.org/10.4028/www.scientific.net/ssp.108-109.627
https://doi.org/10.4028/www.scientific.net/ssp.108-109.627
Publikováno v:
Journal of Crystal Growth. 269:599-605
Secondary phase inclusions with a size of typically 1–3 μm were observed in polycrystalline sheet silicon samples by preferential etching/Normaski microscopy. The chemical compositions of these inclusions were characterized by secondary ion mass s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54cb8c694b7ad25d9b918282e478def1
https://doi.org/10.1016/j.jcrysgro.2004.05.022
https://doi.org/10.1016/j.jcrysgro.2004.05.022