Zobrazeno 1 - 10
of 157
pro vyhledávání: '"Jing-ping Xu"'
Autor:
Chun-Lan Xie, Yu-Ting Yue, Jing-Ping Xu, Na Li, Ting Lin, Guang-Rong Ji, Xian-Wen Yang, Ren Xu
Publikováno v:
Pharmacological Research, Vol 197, Iss , Pp 106968- (2023)
The potential of marine natural products as effective drugs for osteoporosis treatment is an understudied area. In this study, we investigated the ability of lead compounds from deep-sea-derived Penicillium solitum MCCC 3A00215 to promote bone format
Externí odkaz:
https://doaj.org/article/3f38d1ad86d9491fa31965b8448faf41
Publikováno v:
Military Medical Research, Vol 10, Iss 1, Pp 1-20 (2023)
Abstract The rapid development of genome editing technology has brought major breakthroughs in the fields of life science and medicine. In recent years, the clustered regularly interspaced short palindromic repeats (CRISPR)-based genome editing toolb
Externí odkaz:
https://doaj.org/article/68b89135f7bb42468f822cf90513d3d2
Publikováno v:
Journal of Cardiovascular Development and Disease, Vol 9, Iss 10, p 346 (2022)
Background: The association of serum uric acid (SUA) with hypertension has been well established in Caucasian populations. However, its association with hypertension in Chinese remained to be clarified. Methods: Consecutive patients, homogeneous in C
Externí odkaz:
https://doaj.org/article/ed4695852a064fcd831ebc7573b81a70
Publikováno v:
IEEE Transactions on Electron Devices. 70:782-788
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc3d4ef248ed22b13ef05d04eeb8d295
https://doi.org/10.1109/ted.2022.3227519
https://doi.org/10.1109/ted.2022.3227519
Publikováno v:
IEEE Transactions on Electron Devices. 69:3477-3482
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58df7093193f1d04f6250dcab68c1b1f
https://doi.org/10.1109/ted.2022.3170862
https://doi.org/10.1109/ted.2022.3170862
Publikováno v:
IEEE Transactions on Electron Devices. 68:6546-6550
MoS₂ negative-capacitance field-effect transistors (NCFETs) with a gate-stack of Hf₁₋ₓZrₓO₂/Al₂O₃ are fabricated, and the effects of the Zr content and the thickness of the stacked gate on electrical performance of the devices are inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30ef6ae34da2a5a0309183ccd119067a
https://doi.org/10.1109/ted.2021.3118330
https://doi.org/10.1109/ted.2021.3118330
Largely Enhanced Mobility of MoS2 Field-Effect Transistors by Optimizing O2-Plasma Treatment on MoS2
Publikováno v:
IEEE Transactions on Electron Devices. 68:4614-4617
2-D layered MoS2 is considered as a promising candidate for novel nanoelectronic devices in recent years. However, a large number of structural defects in MoS2 have been widely reported, which will greatly degrade the electrical performance of MoS2 d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cba20fb35ac70d12afec9a202b2edc2
https://doi.org/10.1109/ted.2021.3089562
https://doi.org/10.1109/ted.2021.3089562
Publikováno v:
IEEE Transactions on Electron Devices. 68:3087-3090
The effects of the Si-substrate doping concentration on electrical characteristics of back-gate (BG) and top-gate (TG) MoS2 field-effect transistors (FETs) are investigated. The experimental results show that MoS2 FETs fabricated on different-concent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9340e2c987858358fb862de60b7e1944
https://doi.org/10.1109/ted.2021.3074358
https://doi.org/10.1109/ted.2021.3074358
Publikováno v:
IEEE Transactions on Electron Devices. 67:5196-5200
In this article, an effective way of chemical modification on the dielectric surface (Al2O3) is investigated to chemical vapor deposition (CVD)-grown high-quality monolayer MoS2 and the relevant back-gated FETs are fabricated without MoS2 transfer. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a81238bd630a74aefff416bb2d99603
https://doi.org/10.1109/ted.2020.3021998
https://doi.org/10.1109/ted.2020.3021998