Zobrazeno 1 - 10
of 216
pro vyhledávání: '"Jing-Lin Xiao"'
Publikováno v:
Advances in Condensed Matter Physics, Vol 2020 (2020)
Graphene has many unique properties which have made it a hotbed of scientific research in recent years. However, it is not expected intuitively that the strong effects of the substrate and Coulomb doping in the center of crystal cell on the polaron i
Externí odkaz:
https://doaj.org/article/dd747b571b0e42e7ad0b4d2b2bf2f159
Autor:
Gui Zhi Ling, Jing Lin Xiao, Shu Yang, Dong Ling Li, Xin Lian Tang, Xiao Xia Wang, Mu Qing Zhang, Xiao Feng Li
Publikováno v:
GCB Bioenergy, Vol 14, Iss 5, Pp 585-596 (2022)
Abstract Coexistence of ammonium (NH4+) with manganese (Mn) in acid soils may facilitate the alleviation of Mn toxicity to plants. However, the effect of NH4+ on Mn toxicity and the corresponding mechanisms are unclear. In this study, the effects of
Externí odkaz:
https://doaj.org/article/7ddb9f0cd1934bd2b5606bc2548a2d46
Publikováno v:
Journal of Low Temperature Physics. 210:209-231
Publikováno v:
Structures. 43:1716-1731
Publikováno v:
Journal of Low Temperature Physics. 206:191-198
Publikováno v:
International Journal of Quantum Information. 21
In this work, the energies and eigenfunctions of ground state and first-excited states (GFES) of a strongly coupled polaron in a quantum pseudo-dot (QPD) were studied by using variational method of Pekar type (VMPT). A single qubit can be realized in
Publikováno v:
Iranian Journal of Science and Technology, Transactions A: Science. 45:2233-2239
In the present work, we have studied the ground state binding energy (GSBE) and LO phonons mean number (LOPMN) of a strong-coupling polaron in a RbCl asymmetrical semi-exponential quantum well (ASEQW)containing a hydrogen-like impurity (HLI) at the c
Autor:
Jing-Hong Mei, Bin Zhang, Jing-Lin Xiao, Yong Sun, Wei Zhang, Xiu-Juan Miao, null Sarengaowa, Xin-Jun Ma
Publikováno v:
International Journal of Modern Physics B. 37
This study aims at investigating the properties of magnetopolarons (MPs) in III–V compound semiconductors: GaP, GaAs and GaSb crystals. The obtained results from numerical calculation revealed that absolute value of ground-state (GS) binding energy
Autor:
Shuang Han, Wei Zhang, Yong Sun, Xin-Jun Ma, null Xianglian, Jing-Lin Xiao, Pei-Fang Li, Zhao-Hua Ding, Cui-Lan Zhao
Publikováno v:
Micro and Nanostructures. 178:207561
Publikováno v:
Computers & Structures. 281:107029