Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Jing-Hua Teng"'
Autor:
Shengyuan Lu, Ayan Nussupbekov, Xiao Xiong, Wen Jun Ding, Ching Eng Png, Zi‐En Ooi, Jing Hua Teng, Liang Jie Wong, Yidong Chong, Lin Wu
Publikováno v:
Laser & Photonics Reviews.
Terahertz (THz) radiation has broad applications ranging from medical imaging to spectroscopy due to its useful properties, such as strong absorption by organic materials. One viable source of high-intensity THz radiation is the Smith-Purcell (SP) ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::194c6caa2be2970bdaeaa50205f3cc27
https://doi.org/10.1002/lpor.202300002
https://doi.org/10.1002/lpor.202300002
Autor:
Ting, Wang, Chun Kit, Siu, Huan, Yu, Yunfeng, Wang, Siqi, Li, Wei, Lu, Jianhua, Hao, Hong, Liu, Jing Hua, Teng, Dang Yuan, Lei, Xuhui, Xu, Siu Fung, Yu
Publikováno v:
Inorganic chemistry. 57(14)
The influence of plasmonic effect on the upconversion emission characteristics of Yb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e09ce01490f82f6aca18d6cd4e28ee0b
https://pubmed.ncbi.nlm.nih.gov/29939734
https://pubmed.ncbi.nlm.nih.gov/29939734
Publikováno v:
Experimental and Therapeutic Medicine
Barrett's esophagus (BE) is a complication of gastroesophageal reflux disease and is a precursor lesion of esophageal adenocarcinoma. In existing BE models, the incidence of BE is typically low and induction is usually time consuming. In the present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5409c7cd65a2aa060632087d1ad0538b
https://pubmed.ncbi.nlm.nih.gov/30344662
https://pubmed.ncbi.nlm.nih.gov/30344662
Publikováno v:
Journal of Applied Physics; Nov2010, Vol. 108 Issue 9, p093112, 10p, 16 Graphs
Publikováno v:
Laser Focus World. May2012, Vol. 48 Issue 5, p57-61. 6p.
Autor:
Lee Kheng, Tan, Bo, Liu, Jing Hua, Teng, Shifeng, Guo, Hong Yee, Low, Hui Ru, Tan, Christy Yuen Tung, Chong, Ren Bin, Yang, Kian Ping, Loh
Publikováno v:
Nanoscale. 6(18)
A mono- to multilayer thick MoS₂ film has been grown by using the atomic layer deposition (ALD) technique at 300 °C on a sapphire wafer. ALD provides precise control of the MoS₂ film thickness due to pulsed introduction of the reactants and self
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::9e92718662228174b43788fad3d90966
https://pubmed.ncbi.nlm.nih.gov/26036225
https://pubmed.ncbi.nlm.nih.gov/26036225
Autor:
Jian-Rong Dong, Jing-Hua Teng, D., Soo-Jin Chua, Boon-Chin Foo, D., Yan-Jun Wang, D., Lian-wen Zhang, D., Hai-Rong Yuan, D., Shu Yuan
Publikováno v:
Journal of Applied Physics; 5/1/2004, Vol. 95 Issue 9, p5252-5254, 3p, 3 Graphs
