Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Jing Ling Kuo"'
Autor:
E. Ray Hsieh, Meng-Ru Jiang, T. J. Chen, T. P. Chen, Jian-Li Lin, Jing Ling Kuo, Chih-Hung Cheng, Osbert Cheng, Hung-Wen Chen, Chuan-Hsi Liu, S. A. Huang, Steve S. Chung, Yen Chen Kuo
Publikováno v:
IEEE Transactions on Electron Devices. 64:4910-4918
In this paper, we have demonstrated an oxygen-vacancy-based bipolar RRAM on a pure logic 14-nm-node HKMG FinFET platform. A unit cell of the memory consists of a control transistor (FinFET) and a storage transistor (a second FinFET). The later perfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e3ce403f08a2bd97d4fb4089f27db4
https://doi.org/10.1109/ted.2017.2763960
https://doi.org/10.1109/ted.2017.2763960
Autor:
Hsieh, E. Ray, Yen Chen Kuo, Chih-Hung Cheng, Jing Ling Kuo, Meng-Ru Jiang, Jian-Li Lin, Hung-Wen Chen, Chung, Steve S., Chuan-Hsi Liu, Tse Pu Chen, Shih An Huang, Tai-Ju Chen, Cheng, Osbert
Publikováno v:
IEEE Transactions on Electron Devices; Dec2017, Vol. 64 Issue 12, p4910-4918, 9p