Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Jing Hua Xia"'
Publikováno v:
Materials Science Forum. 1014:102-108
In this paper, SiC MOS capacitors were fabricated and annealed in Ar/O2 = 9:1 ambient with different temperature, and the annealing effects on the reliability and performance of SiC MOS capacitance were investigated. We found that annealing in Ar/O2
Publikováno v:
Materials Science Forum. 1014:137-143
A novel process is developed for minority carrier lifetime enhancement in ultra-high 4H-SiC PiN diodes. It comprises two separate processes. Firstly, the ultra-thick epitaxial grown drift layer (200μm) covered with a protective thin carbon film is s
Autor:
Li Xin Tian, Fei Yang, Ling Sang, Yi Ying Zha, Xi Ping Niu, Jing Hua Xia, Liang Tian, Jun Min Wu, Rui Jin
Publikováno v:
Materials Science Forum. 1014:120-125
Designed for 6500V 4H-SiC JBS diodes, a highly-efficient termination structure of a non-uniform multiple floating field limiting rings (MFFLR) featuring with a non-uniform ring spacing and a multiple region division is studied and purposed. For each
Publikováno v:
Materials Science Forum. 1014:144-148
The effect of the field oxidation process on the electrical characteristics of 6500V 4H-SiC JBS diodes is studied. The oxide thickness and field plate length have an effect on the reverse breakdown voltage of the SiC JBS diode. According the simulati
Autor:
Dan Yuan, Xiao-rong Yang, Ceng-fang Li, Qing Ji, Su-yuan Zhang, Kai Wang, Jing-hua Xia, Suai Jin-jingWang Luo, Jin-jing Wang
Background: Granulomatosis with polyangiitis (GPA) is a rare systemic autoimmune vasculitis disease that is highly correlated with antineutrophil cytoplasmic antibodies (ANCAs).It used to be called"Wegener's granulomatosis". The clinical manifestatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::438aed353cd447d1f7d3533b3d40f281
https://doi.org/10.21203/rs.3.rs-1374937/v1
https://doi.org/10.21203/rs.3.rs-1374937/v1
Publikováno v:
Materials Science Forum. 954:157-162
In this paper, an optimized p+ shielding 4H-SiC trench-gate metal-oxide-semiconductor field effect transistors (UMOSFETs) structure with floating regions is proposed. The p+ shielding region is moved down to gain a low device on-resistance and the fl
Publikováno v:
Materials Science Forum. 954:151-156
In this paper, an improved 4H-SiC trench-gate metal-oxide-semiconductor field effect transistors (UMOSFETs) structure with low on-resistance and reduced gate charge is proposed. The added n-type region in the improved structure reduces on-resistance
Autor:
Ying Wang, Jing Hua Xia, Li Meng Chen, Xue Zhao, Yangzhong Zhou, Gang Chen, Yan Qin, Dan Song, Rong Rong Hu, Lei Zhang, Xuemei Li
Publikováno v:
Infection Control & Hospital Epidemiology
Infection Control and Hospital Epidemiology
Infection Control and Hospital Epidemiology
Autor:
Ying Sun, Jiao Zhang, Xue‑Jiao Wang, Xin Yin, Miao‑Miao Wen, Jing‑Hua Xia, Zhi‑Pei Zhang, Yanning Zhang, Xiao‑Fei Li
Publikováno v:
Molecular Medicine Reports
Research has identified that epidermal growth factor receptor (EGFR) tyrosine kinase inhibitors (TKIs) possess large benefits for adenocarcinoma (ADC), although little benefit for squamous cell carcinoma (SCC). The aim of the present study was to inv
Autor:
Ying, Ma, Hai-Yun, Wang, Zi-Juan, Zhou, Yang, Li, Wei, Yang, Bing-Yan, Liu, Jing-Hua, Xia, Xue-Mei, Li, Li-Meng, Chen
Publikováno v:
Zhongguo yi xue ke xue yuan xue bao. Acta Academiae Medicinae Sinicae. 39(4)
Objective To observe the clinical characteristics,dialysis modalities,and outcomes of end stage renal disease(ESRD)patients with polycystic kidney disease(PKD)and to evaluate the feasibility of peritoneal dialysis in these population. Methods The cli