Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jindřich Chval"'
Publikováno v:
Surface Science. 531:113-122
Photon emission from polycrystalline silver induced by scanning tunneling microscopy is studied for three different tip materials (Au, PtIr and W). Photon emission intensity curves as a function of the tip voltage are observed to be almost identical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93077fee5c311e8353b5e1d08c3a223e
https://doi.org/10.1016/s0039-6028(03)00510-7
https://doi.org/10.1016/s0039-6028(03)00510-7
Autor:
P. Lošťák, J. Walachová, Jindřich Chval, S. Karamazov, J. Vaniš, S. Vacková, Martin Pavelka, Miroslav Jelinek, K. Žďánský, R. Zeipl
Publikováno v:
physica status solidi (c). :867-871
Thin layers of Bi2Te3 60 nm thickness were prepared by laser ablation in vacuum using KrF excimer laser. The energy of laser varied from 300 to 680 mJ and the laser energy density from 2 to 10 J cm–2. The substrate temperature varied for different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70520eb17faa83a86f0f41a5d74531a4
https://doi.org/10.1002/pssc.200306251
https://doi.org/10.1002/pssc.200306251
Autor:
Tomáš Mates, K. Dohnalová, Jan Kočka, Ivan Gregora, Ivan Pelant, Antonín Fejfar, Jindřich Chval, Jiří Stuchlík, P. Fojtı́k
Publikováno v:
Philosophical Magazine B. 82:1785-1793
A way in which thin films of hydrogenated amorphous silicon (a-Si: H) can be instantaneously crystallized at room temperature is reported. The metal-induced solid-phase crystallization (MISPC) method with nickel surface coverage is used. In compariso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::299eb3761a4ba8642f4da7e0f31899f5
https://doi.org/10.1080/13642810208222940
https://doi.org/10.1080/13642810208222940
Autor:
Ján Lančok, Jindřich Chval, V. Studnička, Christos Grivas, Costas Fotakis, Miroslav Jelinek, Anna Macková, A. Klini
Publikováno v:
Applied Surface Science. :416-420
Thin films of Er:YAG and Er:YAP were deposited by subpicosecond (450 fs) and nanosecond (20 ns) KrF laser (λ=248 nm) on YAG, YAP, fused silica, silicon and sapphire substrates. Laser spot size, energy density, substrate temperature and deposition am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce29c71a80e27418187fe4d12235be6f
https://doi.org/10.1016/s0169-4332(02)00352-5
https://doi.org/10.1016/s0169-4332(02)00352-5
Publikováno v:
Acta Crystallographica Section E Structure Reports Online. 57:i90-i91
A hexagonal modification (P63mc) of (NH4)2SiF6 was grown accidentally. This new modification has the unit-cell c parameter doubled with respect to a previously reported trigonal form (P\overline 3m1) of the title compound. The H atoms in the present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f468ddb51b14f65b33715d7f7347dde
https://doi.org/10.1107/s160053680101501x
https://doi.org/10.1107/s160053680101501x