Zobrazeno 1 - 10
of 194
pro vyhledávání: '"Jinchai, Li"'
Autor:
Shiqiang Lu, Zongyan Luo, Jinchai Li, Wei Lin, Hangyang Chen, Dayi Liu, Duanjun Cai, Kai Huang, Na Gao, Yinghui Zhou, Shuping Li, Junyong Kang
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-11 (2022)
Abstract A systematic study was carried out for strain-induced microscale compositional pulling effect on the structural and optical properties of high Al content AlGaN multiple quantum wells (MQWs). Investigations reveal that a large tensile strain
Externí odkaz:
https://doaj.org/article/9e3cb9d08b1a44298717181629161a87
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 4, Pp 1-5 (2022)
We demonstrated high-brightness InGaN/GaN green light emitting diodes (LEDs) with ex-situ sputtered stress-manipulated AlNO buffer on 4-inch patterned sapphire substrates. The lattice constant of the AlNO buffer was adjusted by oxygen flow. As a resu
Externí odkaz:
https://doaj.org/article/14a2f11c2c044c9dab53f36026bb02c5
Publikováno v:
Fundamental Research, Vol 1, Iss 6, Pp 717-734 (2021)
AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV) light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap. AlGaN-based devices have extensive applicability owing to their stab
Externí odkaz:
https://doaj.org/article/079771c5a4744e46a7f62d01cad2883b
Autor:
Shiqiang Lu, Jinchai Li, Kai Huang, Guozhen Liu, Yinghui Zhou, Duanjun Cai, Rong Zhang, Junyong Kang
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-16 (2021)
Abstract Here we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a se
Externí odkaz:
https://doaj.org/article/5677aad0bebf457e942bb958fa2f4ff9
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-20 (2021)
This paper review recent advances in ultraviolet LEDs and summarize that multiple physical fields could built a toolkit for effectively controlling and tailoring crucial properties of nitride quantum structures.
Externí odkaz:
https://doaj.org/article/24464b86c44d42eeacc98379fb9bd2a7
Publikováno v:
Crystals, Vol 13, Iss 2, p 366 (2023)
This study presents broadband ultraviolet photodetectors (BUV PDs) based on Ga2O3/GaN core-shell micro-nanorod arrays with excellent performance. Micro-Nanoarchitectonics of Ga2O3/GaN core-shell rod arrays were fabricated with high-temperature oxidiz
Externí odkaz:
https://doaj.org/article/db51107fe49e403aa4908c0df873d4ce
Autor:
Zongyan Luo, Shiqiang Lu, Jinchai Li, Chuanjia Wang, Hangyang Chen, Dayi Liu, Wei Lin, Xu Yang, Junyong Kang
Publikováno v:
AIP Advances, Vol 9, Iss 5, Pp 055004-055004-5 (2019)
The effects of ultrathin AlN insertion layers on the strain status, as well as optical properties of AlGaN multiple quantum wells (MQWs), were studied. A large stress variation of about -1.46 GPa can be achieved by introducing two ultrathin AlN layer
Externí odkaz:
https://doaj.org/article/a36139c2903f40e784bff7c04e3ad859
Autor:
Shiqiang Lu, Tongchang Zheng, Ke Jiang, Xiaojuan Sun, Dabing Li, Hangyang Chen, Jinchai Li, Yinghui Zhou, Duanjun Cai, Shuping Li, Wei Lin, Junyong Kang
Publikováno v:
Physical Chemistry Chemical Physics. 24:5529-5538
Quantum states and arrangement of valence levels determine most of the electronic and optical properties of semiconductors. Since the crystal field split-off hole (CH) band is the top valence band in high-Al-content AlGaN, TM-polarized optical anisot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b11876f6fb825dc1a04a0f3729fb11e
https://doi.org/10.1039/d1cp04303j
https://doi.org/10.1039/d1cp04303j
Publikováno v:
CrystEngComm.
The controlled growth of single-crystalline (InxGa1-x)2O3-based materials with high indium contents is still a big challenge due to the large solid-phase miscibility gap, unclear growth mechanism, and the lack of...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::809a64ba3c05ed484c6b6d02f4fd4e45
https://doi.org/10.1039/d3ce00317e
https://doi.org/10.1039/d3ce00317e
Autor:
Ruifan Tang, Guanqi Li, Ying Jiang, Na Gao, Jinchai Li, Cheng Li, Kai Huang, Junyong Kang, Tao Wang, Rong Zhang
Publikováno v:
ACS Applied Electronic Materials. 4:188-196
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0650963f587dc51c74652503592ccdfe
https://doi.org/10.1021/acsaelm.1c00917
https://doi.org/10.1021/acsaelm.1c00917