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pro vyhledávání: '"Jinan Hao"'
Publikováno v:
2015 China Semiconductor Technology International Conference.
Moving to the 28 nm technology node and beyond, contact to poly overlay requirement becomes more and more stringent in order to achieve manufacturable static random access memory (SRAM) yield. Typically, a 6 nm or even better on product overlay (OPO)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::220a8acb2c313700e739ed45ad614bb4
https://doi.org/10.1109/cstic.2015.7153357
https://doi.org/10.1109/cstic.2015.7153357
