Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jina Eum"'
Publikováno v:
2015 73rd Annual Device Research Conference (DRC).
We could obtain new structure high-side LDMOS with Ron.sp=249mohm*mm2, BVdss=115V by optimizing doping concentration of p+ buried layer located under n-type drift layer and introducing floating poly on STI. And we could also propose 60V fully isolate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68e7ef4a2948dcf3958535ab66948f25
https://doi.org/10.1109/drc.2015.7175584
https://doi.org/10.1109/drc.2015.7175584
Autor:
Kwang-Sik Ko, Sanghyun Lee, Jaehee Lee, Jungsu Jin, Seonghoe Jeong, Yeounsoo Kim, Joo Won Park, In-Wook Cho, Kuemju Lee, Jina Eum
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
In this paper, we developed Deep Trench structure of LDMOS instead of STI in conventional one, with 0.18um 60V BCD process. By forming vertical drift region using Deep Trench, we achieved lower Ron.sp from cell pitch shrink while BVdss does not chang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a82f6a096ec337a892dbc020a04010c4
https://doi.org/10.1109/ispsd.2015.7123411
https://doi.org/10.1109/ispsd.2015.7123411
Autor:
Dea-Hoon Kim, Jong Hwan Kim, In-Wook Cho, Sanghyun Lee, Sung-Kun Park, Jina Eum, Kyung-Dong Yoo, Kwang-Sik Ko
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
In this work, we developed a HB1340-0.13um BCD technology of the complimentary LDMOS including fully isolated structure device with dual drift layer. We could achieve LDMOS with best-in-class trade-off between specific on-resistance and breakdown vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19948afc9e247ccb7e5e859cef37a1ea
https://doi.org/10.1109/ispsd.2013.6694453
https://doi.org/10.1109/ispsd.2013.6694453