Zobrazeno 1 - 10
of 20
pro vyhledávání: '"JinHo Ryu"'
Publikováno v:
IEEE Access, Vol 8, Pp 78847-78867 (2020)
Security professionals, government agencies, and corporate organizations have found an inherent need to prevent or mitigate attacks from insider threats. Accordingly, active research on insider threat detection has been conducted to prevent and mitig
Externí odkaz:
https://doaj.org/article/21a34f264854456ba7abd00094a988cf
Publikováno v:
IEEE Access, Vol 8, Pp 45996-46006 (2020)
Many children with attention deficit hyperactivity disorder (ADHD) perform poorly in their academic studies. They also have difficulties in their social lives due to a lack of interpersonal skills and this often continues into adult life. Appropriate
Externí odkaz:
https://doaj.org/article/ff7d39a3f2914040a05d20e931ed49de
Publikováno v:
Korean Journal of Sport Management. 27:63-80
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9f5efc319b539090c69d650411d5fdd
https://doi.org/10.31308/kssm.27.4.63
https://doi.org/10.31308/kssm.27.4.63
Autor:
Jaedoeg Yu, Kyung-Tae Kang, Jin-Yup Lee, Hyung-Gon Kim, Doo-Sub Lee, Jeong-Don Ihm, Young-Sun Min, An-Soo Park, Chulbum Kim, Jinho Ryu, Dongku Kang, Pansuk Kwak, Doohyun Kim, Kyung-Min Kang, Sung-Yeon Lee, Yong Sung Cho, Moosung Kim, Wandong Kim, Lee Han-Jun, Cheon An Lee, In-Mo Kim, Bong-Kil Jung, Woopyo Jeong, Jae-Ick Son, Nayoung Choi, Ki-Tae Park, Kye-Hyun Kyung, Dae-Seok Byeon, Dong-Su Jang
Publikováno v:
IEEE Journal of Solid-State Circuits. 52:210-217
A 48 WL stacked 256-Gb V-NAND flash memory with a 3 b MLC technology is presented. Several vertical scale-down effects such as deteriorated WL loading and variations are discussed. To enhance performance, reverse read scheme and variable-pulse scheme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::137844fab145a5a3c940f99d0661c310
https://doi.org/10.1109/jssc.2016.2604297
https://doi.org/10.1109/jssc.2016.2604297
Autor:
Jeong-Hyuk Choi, Jinho Ryu, Sang-Won Park, Myung-Hoon Choi, Hyang-ja Yang, Dae-Han Kim, Kye-Hyun Kyung, Donghun Kwak, Kitae Park, Dae-Seok Byeon, Jeong-Don Ihm, Jae-Hoon Jang, Moosung Kim, Kyung-Tae Kang, Doo-Sub Lee, Dongkyo Shim, Ji-Ho Cho, Wook-Ghee Hahn, You-Se Kim, Sang-Won Shim, Jae-Woo Im, Sang-Won Hwang, In-Mo Kim, Hyun-Jun Yoon, Doohyun Kim, Woopyo Jeong, Sang-Wan Nam, Seok-Min Yoon, HyunWook Park
Publikováno v:
IEEE Journal of Solid-State Circuits. 51:204-212
Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as shorter tPROG, lower power consumption and higher endurance. For many years, every effort has been made to shrink die si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::630a5c2ba3286158aacb257b39988422
https://doi.org/10.1109/jssc.2015.2474117
https://doi.org/10.1109/jssc.2015.2474117
Publikováno v:
Computational Materials Science. 178:109615
The Green-Kubo relations have been widely utilized in equilibrium molecular dynamics (MD) simulations to evaluate the lattice thermal conductivity (TC) of condensed matter. In previous studies, however, three different formulas have been used to calc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd223d207b092ff6212143077ab2b800
https://doi.org/10.1016/j.commatsci.2020.109615
https://doi.org/10.1016/j.commatsci.2020.109615
Autor:
Joonsoo Kwon, Hyun-Jun Yoon, Sung-Jun Kim, Dong-Kyu Youn, Jeung-Hwan Park, Kyungwa Yun, Doo-Sub Lee, Dongkyo Shim, HyunWook Park, Sang-Won Shim, Yang-Lo Ahn, Sang-Won Park, Doohyun Kim, Lee Kang-Bin, Hyung-Gon Kim, Kihwan Choi, Seung Hoon Shin, Jeong-Hyuk Choi, Taehyun Kim, Hyang-ja Yang, Ko Kuihan, Dae-Han Kim, Jinho Ryu, Woon-kyung Lee, Dae-Seok Byeon, Yoon-He Choi, Jinseon Yeon, Myong-Seok Kim, Han-soo Kim, Dong-Hyun Kim, Min-Su Kim, Donghun Kwak, Jinman Han, Won-Tae Kim, Kyung-Min Kang, Jae-Hoon Jang, Sang-Wan Nam, Kye-Hyun Kyung, Kitae Park, Moosung Kim, Pansuk Kwak, Myung-Hoon Choi, Du-Heon Song, Sungwhan Seo, Sung-Soo Lee
Publikováno v:
ISSCC
In the past few years, various 3D NAND Flash memories have been demonstrated, from device feasibility to chip implementation, to overcome scaling challenges in conventional planar NAND Flash [1-3]. The difficulties include shrinking the NAND cell and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2fc27711254f4b063d374f8bf40b229
https://doi.org/10.1109/jssc.2014.2352293
https://doi.org/10.1109/jssc.2014.2352293
Autor:
Kye-Hyun Kyung, Pansuk Kwak, Jeong-Hyuk Choi, Jinho Ryu, Young-Sun Min, Nayoung Choi, Hyung-Gon Kim, Dae-Seok Byeon, Doohyun Kim, Jeong-Don Ihm, Hyang-ja Yang, Yong Sung Cho, Jaedoeg Yu, Dong-Su Jang, Kyung-Tae Kang, In-Mo Kim, Bong-Kil Jung, Wandong Kim, Kyung-Min Kang, Chulbum Kim, Dongku Kang, Kitae Park, Sung-Yeon Lee, Moosung Kim, Lee Han-Jun, Woopyo Jeong, An-Soo Park, Jae-Ick Son, Doo-gon Kim, Doo-Sub Lee
Publikováno v:
ISSCC
Today's explosive demand for data transfer is accelerating the development of non-volatile memory with even larger capacity and cheaper cost. Since the introduction of 3D technology in 2014 [1], V-NAND is believed to be a successful alternative to pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cc73229cbb9896796b88129d56940e0
https://doi.org/10.1109/isscc.2016.7417941
https://doi.org/10.1109/isscc.2016.7417941
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface
Autor:
Kye-Hyun Kyung, Chulbum Kim, Hyung-Gon Kim, Pansuk Kwak, Jeon Hongsoo, Du-Heon Song, Jae-Yong Jeong, Kwang-Il Park, In-Youl Lee, Jinman Han, Jaewoo Lim, Young-Hyun Jun, Tae-Sung Lee, Young-Ho Lim, Yong-Sik Yim, Jinho Ryu, Doo-Seop Lee, Chang-hyun Cho, Bo-Keun Kim, Woopyo Jeong, Seonghwan Seo, Seong-Soon Cho
Publikováno v:
IEEE Journal of Solid-State Circuits. 47:981-989
A monolithic 64 Gb MLC NAND flash based on 21 nm process technology has been developed. The device consists of 4-plane arrays and provides page size of up to 32 KB. It also features a newly developed asynchronous DDR interface that can support up to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6547bc67caddbc4fd9175826ed4ae8c9
https://doi.org/10.1109/jssc.2012.2185341
https://doi.org/10.1109/jssc.2012.2185341
Autor:
Sang-Hyun Joo, Jae-Hoon Jang, Jeong-Hyuk Choi, HyunWook Park, Ohsuk Kwon, Jinho Ryu, Doo-Sub Lee, Dongkyo Shim, Donghun Kwak, Kye-Hyun Kyung, Myung-Hoon Choi, Ji-Sang Lee, Jeong-Don Ihm, Sang-Won Park, Ji-Ho Cho, Kyung-Tae Kang, Jae-Woo Im, Sung-Ho Choi, Moosung Kim, Ki-Tae Park, Wook-Ghee Hahn, Seok-Min Yoon, You-Se Kim, Woopyo Jeong, Sang-Wan Nam, Dae-Seok Byeon, Sang-Won Hwang, Hyang-ja Yang, Dae-Han Kim, Hyun-Jun Yoon, In-Mo Kim, Sang-Won Shim, Young-Sun Min, Doohyun Kim
Publikováno v:
ISSCC
Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as smaller tPROG, lower power consumption and longer endurance. For many years, every effort has been made to shrink die si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83b7a4ed6a586fb68ca3f6bb1b8736bc
https://doi.org/10.1109/isscc.2015.7062960
https://doi.org/10.1109/isscc.2015.7062960