Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Jin-soak Kim"'
Publikováno v:
Lupus. 27(11)
Objectives This study aims to identify the factors associated with the development and mortality of pulmonary hypertension (PH) in systemic lupus erythematosus (SLE) patients. Methods We conducted a prospective study of SLE patients in a single terti
Autor:
Eun-ae Chung, Geum-Jong Bae, Nakanishi Toshiro, Maria Toledano-Luque, Jin-soak Kim, Guangfan Jiao, Thomas Kauerauf, Ki-Hyun Hwang, Dong-Won Kim, Seung-Hun Lee, Kab-Jin Nam, Dong-il Bae
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
In this work, the oxide electric field (Eox) reduction caused by negatively charged traps is proposed to explain the robustness of SiGe pMOSFETs to negative gate bias temperature instability (NBTI) stress. The high density of negatively charged accep
Autor:
Hyunchul Sagong, Seungjin Choo, Jin-soak Kim, Minjung Jin, Yeshin Kim, Sungyoung Yoon, Seung Chul Shin, Changze Liu, Sangwoo Pae, Seung-Hyun Park, Ju-Seop Park, Hyeonwoo Nam, Hwa-Kyung Kim, Hyewon Shim, Junekyun Park
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We report the extensive 14nm FinFET reliability characterization work and provide physical mechanisms and geometry dependencies. BTI, HCI variability related to #of Fin used in design along with self-heat considerations are critical for product desig
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:6504-6509
The energy states of InAs/GaAs self-assembled quantum dots (QDs) were analyzed by comparing between two QD systems with different QD sizes. The electrical properties of the QD systems were investigated via capacitance-voltage measurements and capacit
Autor:
Ji-Su Son, Sung-Ho Lee, Hooyoung Song, Jae Bum Kim, Eun Kyu Kim, Jin Soak Kim, Sung-Min Hwang
Publikováno v:
Solid-State Electronics. 54:1221-1226
Characteristics of nonpolar (1 1–2 0) a -plane GaN template on r -plane sapphire substrate and subsequently grown InGaN/GaN quantum well (QW) structures were investigated. The crystal orientation and the defect evolution behavior in a- plane GaN te
Publikováno v:
Journal of the Korean Physical Society. 55:1041-1045
sizes, with the QD layers being separated by spacer layers with thicknesses of 20 nm and 100 nm. In the DLTS measurement for the QD samples, two signals obtained from discrete energy levels of the QDs were analyzed. For the 100-nm-spacer layered QD s
Publikováno v:
Superlattices and Microstructures. 46:312-317
The carrier trapping and emission processes of InAs self-assembled quantum dots (QDs) on GaAs substrates were measured and analyzed using capacitance–voltage techniques and deep-level transient spectroscopy (DLTS). We used different applied biases
Publikováno v:
physica status solidi (b). 246:808-811
Energy levels of InAs/GaAs self-assembled quantum dot (QD) system were analyzed by capacitance–voltage (C –V) and deep level transient spectroscopy (DLTS) methods. The QD signals were partially separated by DLTS measurement with small bias changi
Publikováno v:
Journal of the Korean Physical Society. 53:2612-2615
Publikováno v:
Japanese Journal of Applied Physics. 47:5066-5069
In this paper, we studied the electrical and optical properties of magnetic impurities and non-magnetic impurities of p-type InMnP:Zn co-doped with Zn by using electrical measurements such as capacitance-voltage (C-V), deep level transient spectrosco