Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jin-Yu Ni"'
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 34(49)
Topological magnons in a one-dimensional (1D) ferromagnetic (FM) Su-Schrieffer-Heeger (SSH) model with anisotropic exchange interactions are investigated. Apart from the inter-cellular isotropic Heisenberg interaction, the intercellular anisotropic e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f6d4c7f2a0a79a748ec77f4625bba02
https://pubmed.ncbi.nlm.nih.gov/36223790
https://pubmed.ncbi.nlm.nih.gov/36223790
Objective. Predict the main active ingredients, potential targets, and critical pathways of Tripterygium wilfordii treatment in Henoch-Schonlein purpura nephritis, and explore possible mechanisms by network pharmacology and molecular docking technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb362daa0f5678eea61c588c50b27071
https://doi.org/10.21203/rs.3.rs-1264964/v1
https://doi.org/10.21203/rs.3.rs-1264964/v1
Publikováno v:
Advanced Materials Research. :1027-1030
AlGaN/InGaN/GaN double heterostructure high electron mobility transistor (HEMT) with In composition from 0.08 to 0.26 were grown by MOCVD. 2DEG density and mobility of different channel In composition were investigated. When In composition below 0.19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88a1f18ce3ebd0a4d2272c08671fb3ea
https://doi.org/10.4028/www.scientific.net/amr.805-806.1027
https://doi.org/10.4028/www.scientific.net/amr.805-806.1027
Publikováno v:
Advanced Materials Research. :948-953
GaN high electronic mobility transistor (HEMT) was fabricated on silicon substrate. A breakdown voltage of 800V was obtained without using field plate technology. The fabrication processes were compatible with the conventional GaN HEMTs fabrication p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48185a4a7b71c2bb40e0fda69539bd05
https://doi.org/10.4028/www.scientific.net/amr.805-806.948
https://doi.org/10.4028/www.scientific.net/amr.805-806.948
Publikováno v:
Advanced Materials Research. :1035-1038
High quality N-polar GaN films were grown by MOCVD on C-face 6H-SiC substrate etched by KOH eutectics at 300°C for 5min. A 50 nm high-temperature AlN buffer layer was used to release the lattice mismatch stress between GaN and SiC substrate. The N-p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eb0edf51fcc8d896fdfd118bc1c3c74
https://doi.org/10.4028/www.scientific.net/amr.805-806.1035
https://doi.org/10.4028/www.scientific.net/amr.805-806.1035
Publikováno v:
High Temperature Materials and Processes, Vol 42, Iss 1, Pp id. 2000079-1116 (2023)
Aiming at the quality problems such as segregation, porosity and shrinkage cavities that are difficult to eliminate due to the size effect of large die-cast steel ingots as large forging blanks, the idea of layered casting of large steel ingots is pr
Externí odkaz:
https://doaj.org/article/1ebbd83e173d46e49bf96ab50a097fbb
Publikováno v:
2014 IEEE International Conference on Electron Devices and Solid-State Circuits.
E/D mode GaN HEMTs and DCFL-based inverter were monolithically fabricated on Si-based GaN material. Selective barrier thinning method and MIS structure were used to realize GaN E/D mode HEMTs integration. E/D mode GaN HEMTs with threshold voltage of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f07dd78b483be35c38c6b0417284cda9
https://doi.org/10.1109/edssc.2014.7061276
https://doi.org/10.1109/edssc.2014.7061276
Autor:
Tang-Sheng Chen, Chuanhao Li, Xun Dong, Xin-Xin Yu, Zhonghui Li, Lei Pan, Jin-Yu Ni, Daqing Peng
Publikováno v:
Chinese Physics Letters. 32:058103
GaN films with an AlxGa1−xN/AlyGa1−yN superlattice (SL) buffer layer are grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD). The structure and strain properties of the samples are studied by optical microscopy, Raman s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ac903756fe52e833d2e005ee1e771a
https://doi.org/10.1088/0256-307x/32/5/058103
https://doi.org/10.1088/0256-307x/32/5/058103
Autor:
Lei Pan, Xin-Xin Yu, Jianjun Zhou, Jin-Yu Ni, Kong Cen, Zhonghui Li, Yuechan Kong, Xun Dong, Tang-Sheng Chen
Publikováno v:
Chinese Physics Letters. 31:037201
We report on the high breakdown performance of AlGaN/GaN high electron mobility transistors (HEMTs) grown on 4-inch silicon substrates. The HEMT structure including three Al-content step-graded AlGaN transition layers has a total thickness of 2.7 μm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::062f3e9b09afa199fd93c6b6afe31817
https://doi.org/10.1088/0256-307x/31/3/037201
https://doi.org/10.1088/0256-307x/31/3/037201
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