Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Jin-Shi Zhao"'
Publikováno v:
ACS Applied Nano Materials. 6:3919-3926
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8e91558d823c39b49a9344413dab196
https://doi.org/10.1021/acsanm.3c00005
https://doi.org/10.1021/acsanm.3c00005
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:24734-24740
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0d97ea55b2e1bee824a58b24278b8b0
https://doi.org/10.1007/s10854-022-09180-y
https://doi.org/10.1007/s10854-022-09180-y
Autor:
Xiang Yu Wang, Yuting Chen, Jihun Kim, Yu Yan, Jia Cheng Li, Jin Shi Zhao, Cheol Seong Hwang, Gang Ri Cai, Hyeon Woo Park
Publikováno v:
ACS Applied Materials & Interfaces. 13:39561-39572
In electronic bipolar resistive switching (eBRS), the electron trapping and detrapping at the defect sites within the switching layer, such as the highly defective TiO1.7 in this study, constitute the switching mechanism. It is an appealing candidate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73682140798d92ca0b484ba925d91615
https://doi.org/10.1021/acsami.1c09436
https://doi.org/10.1021/acsami.1c09436
Publikováno v:
Nanoscale Horizons; Apr2023, Vol. 8 Issue 4, p509-515, 7p
Autor:
Jiuzhou Ren, Hui Liang, Jiacheng Li, Ying Chen Li, Wei Mi, Liwei Zhou, Zhe Sun, Song Xue, Gangri Cai, Jin Shi Zhao
Publikováno v:
ACS applied materialsinterfaces. 14(12)
Memristors will be critical components in the next generation of digital technology and artificial synapses. Researchers are investigating innovative mechanistic understanding of the memristor devices based on low-cost, solution-processable, and orga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27e5db29a0904e0882fd59a7c223c97e
https://pubmed.ncbi.nlm.nih.gov/35262345
https://pubmed.ncbi.nlm.nih.gov/35262345
Autor:
Yu, Yan, Jia Cheng, Li, Yu Ting, Chen, Xiang Yu, Wang, Gang Ri, Cai, Hyeon Woo, Park, Ji Hun, Kim, Jin Shi, Zhao, Cheol Seong, Hwang
Publikováno v:
ACS applied materialsinterfaces. 13(33)
In electronic bipolar resistive switching (eBRS), the electron trapping and detrapping at the defect sites within the switching layer, such as the highly defective TiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3c913e7ea414cec2a786a1a0b3375c78
https://pubmed.ncbi.nlm.nih.gov/34378371
https://pubmed.ncbi.nlm.nih.gov/34378371
Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaO
Publikováno v:
ACS applied materialsinterfaces. 12(9)
A flexible resistive switching (RS) memory was fabricated on a Ta/TaOx/Pt/polyimide (PI) structure with various TaOx thicknesses (5, 10, and 15 nm). The oxygen vacancy (VO) concentrations in the Ta...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ac077d21aeb98020acf6285614fe622
https://pubmed.ncbi.nlm.nih.gov/32043349
https://pubmed.ncbi.nlm.nih.gov/32043349
Autor:
Ran Chen, Zhang Kailiang, Wenliang Zhao, Zhengchun Yang, Tao Xue, Xuan Li, Jian-Yun Wang, Jin-Shi Zhao
Publikováno v:
Science of Advanced Materials. 10:215-219
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f91b337f72d1d72ce76d598c7b529d4
https://doi.org/10.1166/sam.2018.2954
https://doi.org/10.1166/sam.2018.2954
Publikováno v:
Nanoscale. 9:2358-2368
Ta2O5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4caa6aeb64c906324d5fc004b2264274
https://doi.org/10.1039/c6nr08470b
https://doi.org/10.1039/c6nr08470b
Autor:
Yu Yan, Dian You Song, Wen Tao Sun, Wei Mi, Yuting Chen, Xiang Yu Wang, Jun Ye Li, Chen Wang, Li Wei Zhou, Jin Shi Zhao
Publikováno v:
Vacuum. 174:109186
Two top electrode (TE) metals, Al and Ta, were deposited on TaOx/Pt to investigate the effect of different interfacial states between TE and TaOx on resistive switching (RS). During TE metals deposition, 4-nm-thick AlOδ interface layer (IL) formed i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5404b356dbff3aa0840763156f5d653
https://doi.org/10.1016/j.vacuum.2020.109186
https://doi.org/10.1016/j.vacuum.2020.109186