Zobrazeno 1 - 10
of 604
pro vyhledávání: '"Jin-Seong Park"'
Publikováno v:
Journal of Information Display, Vol 25, Iss 3, Pp 295-303 (2024)
Oxide semiconductor-based thin-film transistors (TFTs) are promising candidates for display backplanes and memory device applications. To achieve high device performance and sustain the electrical properties under prolonged operation, it is important
Externí odkaz:
https://doaj.org/article/c60b76b489494750a871d21e03977df0
Publikováno v:
Journal of Information Display, Vol 25, Iss 2, Pp 179-185 (2024)
This study presents the development of multi-channel thin-film transistors (TFTs) using plasma-enhanced atomic layer deposition (PEALD) to stack layers of IGZO/Al2O3, with the number of stacking layers ranging from 1 to 10 (1S, 3S, 5S and 10S). To op
Externí odkaz:
https://doaj.org/article/dc6ca49a2eca4831b6191939b7c78334
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 15, Pp n/a-n/a (2024)
Abstract The reliability of oxide‐semiconductor (OS) thin‐film transistors (TFTs) is significantly influenced by the gate insulator (GI). During electrical bias stress, the defect sites near the semiconductor/GI interface and/or within the GI may
Externí odkaz:
https://doaj.org/article/12b136e9de374860948453f7e1ab68f0
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 11, Pp n/a-n/a (2024)
Abstract The utilization of a zirconium oxide (ZrO2) thin film as the insulator in a metal–insulator–semiconductor (MIS) capacitor to enhance the characteristics of thin‐film transistors is investigated. Although the high crystallinity of ZrO2
Externí odkaz:
https://doaj.org/article/b8b52f41151b4e799b7ec864a1afc545
Autor:
Dong-Gyu Kim, Su-Hwan Choi, Won-Bum Lee, Gyeong Min Jeong, Jihyun Koh, Seunghee Lee, Bongjin Kuh, Jin-Seong Park
Publikováno v:
Small Structures, Vol 5, Iss 2, Pp n/a-n/a (2024)
Highly reliable atomic layer deposition (ALD)‐derived In‐Ga‐Zn‐O thin‐film transistors with high field‐effect mobility (μFE) and hydrogen (H) resistivity are crucial for the semiconductor industry. Herein, a hybrid Al2O3 gate insulator (
Externí odkaz:
https://doaj.org/article/a868ffadd599423c8a27c8edc353a19e
Publikováno v:
Journal of Information Display, Vol 24, Iss 2, Pp 119-125 (2023)
By comparing Ni and ITO electrodes of SnO TFT, we find a facile method to control p-type SnO TFT performance. A Ni-electrode TFT has a high field-effect mobility of 3.3 cm2/Vs and a low on/off current ratio of 3.6 × 101. Compared to Ni, ITO-electrod
Externí odkaz:
https://doaj.org/article/109cfa94185248f894adb291f2800fcf
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract The optimized ALD infilling process for depositing Al2O3 in the vertical direction of PbS QDs enhances the photoresponsivity, relaxation rate and the air stability of PbS QDs hybrid IGZO NIR phototransistors. Infilled Al2O3, which is gradual
Externí odkaz:
https://doaj.org/article/f5c0a6d561bf4d3598446e585d3e2656
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)
Abstract In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical characteristics for application in thin‐film transistor (TFT) applications such as low off current and relatively high mobility. However, most recently, a
Externí odkaz:
https://doaj.org/article/f2eba353224f4348bbacc4969ed637a4
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)
Abstract Tin monoxide (SnO) has been studied widely over the past several decades due to its promising theoretical p‐type performance. However, limited fabrication processes due to the low thermal and air stability of SnO have resulted in poor perf
Externí odkaz:
https://doaj.org/article/b54ce56ad8ab4bc3b80b9750282b20f4
Publikováno v:
International Journal of Extreme Manufacturing, Vol 5, Iss 1, p 012006 (2023)
Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide semiconductors has grown. They offer high mobility, low off-current, low process temperature, and wide flexibility for compositions and processes. Unf
Externí odkaz:
https://doaj.org/article/72a26c721403418ba3a2a36acce1ddd6