Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Jin-Seok Chung"'
Autor:
Ahyoung Kim, Soo Yeon Lim, Jung Hyun Park, Jin-Seok Chung, Hyeonsik Cheong, Changhyun Ko, Jong-Gul Yoon, Sang Mo Yang
Publikováno v:
RSC Advances. 12:23039-23047
We investigated temperature-dependent nanoscale conduction in an epitaxial VO2 film grown on an Al2O3 substrate using conductive-atomic force microscopy and deep data analysis.
Publikováno v:
Current Applied Physics. 20:1185-1189
Understanding ferroelectric domain switching dynamics at the nanoscale is a great of importance in the viewpoints of fundamental physics and technological applications. Here, we investigated the intriguing polarity-dependent switching dynamics of fer
Autor:
Bo Wang, Sang Mo Yang, Saikat Das, Long Qing Chen, Seung Chul Chae, Jin Seok Chung, Tae Won Noh, Sung Min Park, Jong-Gul Yoon
Publikováno v:
Nature Nanotechnology. 13:366-370
Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient 1 that enables mechanical manipulation of polarization without applying an electrical bias2,3. Recently, flexoelectricity was directly demonstrate
Autor:
Sang Mo Yang, Jinkwon Kim, Han Gyeol Lee, Jin-Seok Chung, Sang-Min Lee, Sang Hwa Park, Junsik Mun, Tae Won Noh, Ji Hye Lee, Tae Heon Kim, Seo Hyoung Chang, Suk Bum Chung, Miyoung Kim, Eun Kyo Ko
Publikováno v:
Advanced Electronic Materials. 8:2100804
Autor:
Seo Hyoung Chang, Miyoung Kim, Yoonkoo Kim, Sang Mo Yang, Yeong Jae Shin, Lingfei Wang, Jin-Seok Chung, Daesu Lee, Tae Won Noh, Jeong Rae Kim, Ho-Hyun Nahm, Jong-Gul Yoon
Publikováno v:
ACS Applied Materials & Interfaces. 9:27305-27312
With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is
Autor:
Junghyun Park, Jin Kuk Yang, Sungkyun Park, Y.S. Lee, Bong Ko, Young Jun Chang, Jin-Seok Chung, Hyuk Kim, Jiwoong Kim, Miru Noh
Publikováno v:
Current Applied Physics. 16:1576-1580
By using the spectroscopic ellipsometric technique, we investigated the excimer laser annealing (ELA) effect on the electronic properties of indium tin oxides (ITO) films fabricated by the DC-sputtering method, which is the one of the most commonly k
Synchrotron X-ray microdiffraction of Fe–3 wt%Si steel focusing on sub-boundaries within Goss grains
Autor:
Hyung-Seok Shim, Kyehwan Gil, Soo-Bin Kwon, Jin-Seok Chung, Jong-Tae Park, Tae-Wook Na, Nong-Moon Hwang
Publikováno v:
Scripta Materialia. 116:71-75
The microstructure evolved after the initial stage of abnormal grain growth (AGG) in Fe–3 wt%Si steel was examined using synchrotron X-ray microdiffraction to identify the sub-boundaries, which had been suggested to induce the selective AGG of Goss
Autor:
Miru Noh, Young Jun Chang, Yongseok Lee, Min Gyu Kang, Jin-Seok Chung, Hyuk Kim, Jung-Hun Park, Il Wan Seo, Junghyun Park, Chong Yun Kang
Publikováno v:
Current Applied Physics. 16:145-149
We report on the effect of the excimer laser annealing on the electronic properties of indium tin oxide (ITO) sol–gel films by using spectroscopic ellipsometric technique. We found that the excimer laser annealing effectively induces the crystalliz
Autor:
Muhammad Sheeraz, Wei Peng, Lingfei Wang, Kui Yao, Bo Wang, Jin Seok Chung, Jun Pan, Chang Won Ahn, Long Qing Chen, Kun Guo, Jacob A. Zorn, Tae Heon Kim, Tae Won Noh, Chang Jae Roh, Yaping Zhang, Jong Seok Lee, Junsik Mun, Miyoung Kim
Publikováno v:
Advanced Functional Materials. 30:1910569
J.A.Z. and J.M. contributed equally to this work. This work was supported by the Research Center Program of IBS (Institute for Basic Science) in Korea (IBS-R009-D1). STEM measurement was supported by the National Center for Inter-University Research
Autor:
Yeong Jae, Shin, Lingfei, Wang, Yoonkoo, Kim, Ho-Hyun, Nahm, Daesu, Lee, Jeong Rae, Kim, Sang Mo, Yang, Jong-Gul, Yoon, Jin-Seok, Chung, Miyoung, Kim, Seo Hyoung, Chang, Tae Won, Noh
Publikováno v:
ACS applied materialsinterfaces. 9(32)
With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is