Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Jin-Hyuk Oh"'
Autor:
Yong-Sung Eom, Gwang-Mun Choi, Ki-Seok Jang, Jiho Joo, Chan-mi Lee, Jin-Hyuk Oh, Seok-Hwan Moon, Kwang-Seong Choi
Publikováno v:
ETRI Journal, Vol 46, Iss 2, Pp 347-359 (2024)
A simultaneous transfer and bonding (SITRAB) process using areal laser irradiation is introduced for high-yield and cost-effective production of mini- or micro-light-emitting diode (LED) display panels. SITRAB materials are special epoxy-based solven
Externí odkaz:
https://doaj.org/article/59e765084de140da8c3076a8273977e2
Autor:
Yong‐Sung Eom, Gwang‐Mun Choi, Ki‐Seok Jang, Jiho Joo, Chan‐mi Lee, Jin‐Hyuk Oh, Seok‐Hwan Moon, Kwang‐Seong Choi
Publikováno v:
ETRI Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::205df238abab753029e8fdb11f14ff07
https://doi.org/10.4218/etrij.2022-0471
https://doi.org/10.4218/etrij.2022-0471
Autor:
Kwang-Seong Choi, Jiho Joo, Gwang-Mun Choi, Ho-Gyeong Yun, Seok Hwan Moon, Ki-seok Jang, Chanmi Lee, Jin-Hyuk Oh, In-Seok Kye, Yoon-Hwan Moon, Yong-Sung Eom
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aae1e772606cce0eecc6225c0b6a57eb
https://doi.org/10.1109/ectc51906.2022.00042
https://doi.org/10.1109/ectc51906.2022.00042
Autor:
Deog-Kyoon Jeong, Gyu-Seob Jeong, Sanghoon Kim, Gyungock Kim, In Gyoo Kim, Ki-Seok Jang, Sun Ae Kim, Jiho Joo, Jin Hyuk Oh, Hankyu Chi
Publikováno v:
SPIE Proceedings.
We present the performance of 4-channel × 25 Gb/s all-silicon photonic receivers based on hybrid-integrated vertical Ge-on-bulk-silicon photodetectors with 65nm bulk CMOS front-end circuits, characterized over 100 Gb/s. The sensitivity of a single-c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7ef642a1c0bfda04f8b6d4c53157820
https://doi.org/10.1117/12.2212740
https://doi.org/10.1117/12.2212740
Autor:
In Gyoo Kim, Jiho Joo, Gyungock Kim, Sanghoon Kim, Jaegyu Park, Myung-Joon Kwack, Sang-Gi Kim, Hyundai Park, Ki-Seok Jang, Sun Ae Kim, Jin Hyuk Oh
Publikováno v:
Optical Interconnects XVI.
We present new scheme for chip-level photonic I/Os, based on monolithically integrated vertical photonic devices on bulk silicon, which increases the integration level of PICs to a complete photonic transceiver (TRx) including chip-level light source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40dec846f22294e9e90bdd3e99739db2
https://doi.org/10.1117/12.2212465
https://doi.org/10.1117/12.2212465
Publikováno v:
Optical Interconnects XVI.
We present high performance vertical-illumination type Ge-on-Si avalanche photodetectors and photoreceiver modules operating up to 25 Gb/s. The Ge avalanche photodetectors were grown on a bulk-silicon wafer by RPCVD, and fabricated with CMOS-compatib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcc5efeae7ce11dad30b23b1d267ff13
https://doi.org/10.1117/12.2212510
https://doi.org/10.1117/12.2212510
Autor:
Myung-Joon Kwack, Jin Hyuk Oh, Jaegyu Park, Jiho Joo, Gyungock Kim, Ki-Seok Jang, Hyundai Park, Sang-Gi Kim
Publikováno v:
SPIE Proceedings.
Advancement of silicon photonics technology can offer a new dimension in data communications with un-precedent bandwidth. Increasing the integration level in the silicon photonics is required to develop compact high-performance chip-level optical int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::161e6bfdec7705890c68663cddc6a0e5
https://doi.org/10.1117/12.2209458
https://doi.org/10.1117/12.2209458
Publikováno v:
Optics Letters. 43:5583
We present the enhanced performances of a vertical-illumination-type Ge-on-Si avalanche photodetector based on internal RF-gain effects operating up to 50 Gb/s. A fabricated Ge-on-Si avalanche photodetector (APD) exhibits three operational voltage re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb0fb88ba7df2fbc8d5245cfe728fd3f
https://doi.org/10.1364/ol.43.005583
https://doi.org/10.1364/ol.43.005583
Autor:
Jun-Eun Park, Jiho Joo, In Gyoo Kim, Hankyu Chi, Sanghoon Kim, Jin Hyuk Oh, Ki-Seok Jang, Sun Ae Kim, Gyungock Kim, Sungwoo Kim, Yoonsoo Kim, Deog-Kyoon Jeong, Gyu-Seob Jeong
Publikováno v:
Optics express. 23(9)
We present the hybrid-integrated silicon photonic receiver and transmitter based on silicon photonic devices and 65 nm bulk CMOS interface circuits operating over 30 Gb/s with a 10(-12) bit error rate (BER) for λ ~1550nm. The silicon photonic receiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f5a6d4f6eb717db43f813a67fea8b27
https://pubmed.ncbi.nlm.nih.gov/25969309
https://pubmed.ncbi.nlm.nih.gov/25969309
Autor:
Jin Hyuk Oh, In Gyoo Kim, Jiho Joo, Sanghoon Kim, Ki-Seok Jang, Sun Ae Kim, Taeyong Kim, Gyungock Kim
Publikováno v:
SPIE Proceedings.
We report a 40 Gb/s photoreceiver based on vertical-illumination type Ge-on-Si photodetectors and a silica-based AWG demultiplexer by employing 4-channel CWDM. The 60um-diameter Ge-on-Si photodetector arrays, grown on a bulk silicon wafer by RPCVD an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbd13ffc89c3747bf1d5f6a2bf2f3e22
https://doi.org/10.1117/12.2078844
https://doi.org/10.1117/12.2078844