Zobrazeno 1 - 2
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pro vyhledávání: '"Jin-Gun Koo Koo"'
Publikováno v:
ETRI Journal. 24:328-331
¾ We investigated the electrical characteristics of p-channel double -diffused MOSFETs (p -LDMOSFETs) with an uneven racetrack source (URS) anda conventional racetrack source (CRS) for PDP driver IC applications. The breakdown voltage of the p-LDMOS
Autor:
Sang-Gi Kim, Hoon Soo Park Park, Dae Yong Kim Kim, Jongdae Kim Kim, Tae Moon Roh Roh, Jin-Gun Koo Koo
Publikováno v:
ETRI Journal. 21:22-28
A new tapered TEOS oxide technique has been developed to use field oxide of the power integrated circuits. It provides better uniformity of less than 3 % and reproducibility. On-resistance of P-channel RESURF (REduced SURface Field) LDMOS transistors