Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Jin-Aun Ng"'
Publikováno v:
European Biophysics Journal. Feb2008, Vol. 37 Issue 2, p213-222. 10p. 5 Graphs.
Publikováno v:
Fluctuation and Noise Letters. :245-257
For stock market data, the empirical distribution of the return for stock price and the empirical distribution of the return for stock market index are well known. However, for the detrended data (defined as data divided by trend), which is a differe
Publikováno v:
European Biophysics Journal. 37:213-222
When modelling biological ion channels using Brownian dynamics (BD) or Poisson-Nernst-Planck theory, the force encountered by permeant ions is calculated by solving Poisson's equation. Two free parameters needed to solve this equation are the dielect
Autor:
Kuniyuki Kakushima, Hei Wong, Chandan Kumar Sarkar, Hiroshi Iwai, Joel Molina, Banani Sen, Jin Aun Ng
Publikováno v:
Solid-State Electronics. 51:475-480
By measuring the current–voltage and capacitance–voltage characteristics of thin La 2 O 3 film at several different temperatures ranging from 100 to 400 K and after constant-voltage stressing at different durations, we reveal the existence of a s
Publikováno v:
Europhysics Letters (EPL). 76:1043-1049
The one-sided power spectrum P(f) of the fluctuation Nfluc(E) and Nfluc(e) of the spectral staircase function, for respectively the original and unfolded spectrum, from its smooth average part is numerically estimated for Poisson spectrum and spectra
Autor:
Yusuke Kuroki, Kazuo Tsutsui, Toru Matsuda, Eiji Ikenaga, Jin Aun Ng, Parhat Ahmet, Hiroshi Nohira, Kuniyuki Kakushima, Jaeyeol Song, Keisuke Kobayashi, Takeo Hattori, Hiroshi Iwai, Yasuhiro Shiino, K. Tachi
Publikováno v:
The Electrochemical Society. 3(2):169-173
The effect of substrate-temperature during the deposition of lanthanum oxide on the chemical structure of lanthanum oxide/Si(100) interfacial transition layer formed between lanthanum oxide and Si-substrate was studied from the measurements of angle-
Publikováno v:
ECS Transactions. 1:239-247
MISFETs with La2O3 gate insulator were fabricated and several heat treatments were performed. High effective mobility was obtained by Post Metallization Anneal (PMA). XPS analysis reveals the formation of Al2O3 between Al and La2O3 during the anneali
Autor:
Jin Aun Ng, Kazuo Tsutsui, Hiroshi Iwai, Nobuyuki Sugii, Takeo Hattori, Kuniyuki Kakushima, Parhat Ahmet
Publikováno v:
IEICE Electronics Express. 3(13):316-321
In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different post deposition annealing (PDA) conditions; annealing temperature (300°C - 600°C) and ambient (N2 or O2). High effective
Autor:
Jin Aun Ng, Kazuo Tsutsui, Hiroshi Iwai, Yusuke Kuroki, Takeo Hattori, Hei Wong, Nobuyuki Sugii, Kuniyuki Kakushima, S. Ohmi
Publikováno v:
Microelectronic Engineering. 80:206-209
This work reports the effects of low-temperature post-deposition annealing (PDA) and post-metallization annealing (PMA) on the electrical properties of ultrathin (with EOT ranging from 1.29 nm to 2.33 nm) La2O3 gate dielectric films. We found that po
Autor:
Paul J, Keall, Jin, Aun Ng, Ricky, O'Brien, Emma, Colvill, Chen-Yu, Huang, Per, Rugaard Poulsen, Walther, Fledelius, Prabhjot, Juneja, Emma, Simpson, Linda, Bell, Florencia, Alfieri, Thomas, Eade, Andrew, Kneebone, Jeremy T, Booth
Publikováno v:
Medical physics. 42(1)
Kilovoltage intrafraction monitoring (KIM) is a real-time image guidance method that uses widely available radiotherapy technology, i.e., a gantry-mounted x-ray imager. The authors report on the geometric and dosimetric results of the first patient t