Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jin Woong Kwak"'
Publikováno v:
IEEE Transactions on Power Electronics. 38:500-509
Autor:
Jin Woong Kwak, D. Brian Ma
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Autor:
Jin Woong Kwak, D. Brian Ma
Publikováno v:
ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC).
Autor:
Jin Woong Kwak, D. Brian Ma
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
Along with the exponential growth of datacenter business, power delivery systems for datacenters act quickly to adopt 48V power architecture in order to achieve less distribution (I2R) loss, higher power density, and reduced cost. However, 48V power
Publikováno v:
MOCAST
Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a replacement for currently used embedded non-volatile memory. We describe the characteristics of STT-MRAM and explore aspects of the memory array including trade-off in size, switching
Publikováno v:
2018 IEEE 13th Dallas Circuits and Systems Conference (DCAS).
A variety of charge-based logic devices are being investigated as possible technology options for the beyond-CMOS era. The tunneling devices, such as the Bilayer Pseudo Spin Field Effect transistor (BiSFET), the Bilayer Pseudo Spin Junction Transisto
Publikováno v:
IEEE Aerospace & Electronic Systems; Jan2023, Vol. 38 Issue 1, p500-509, 10p