Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Jin Suk Wang"'
Publikováno v:
Sensors, Vol 6, Iss 5, Pp 526-535 (2006)
The precursors of SnO2 or In2O3/SnO2 nanocrystlline powders have been prepared bythe sol-precipitation method. The precursors were calcined at different temperatures to prepareSnO2 or In2O3/SnO2 nanocrystalline powders with different particle sizes.
Externí odkaz:
https://doaj.org/article/e360c7d202a44362b7ec91d8d5073d68
Maskless Laser Direct Patterning of PEDOT/PSS Layer for Soluble Process Organic Thin Film Transistor
Autor:
Jin-Suk Wang, Kyu-Ha Baek, Lee-Mi Do, Ga-Won Lee, Ki-Chul Song, Hong-Sik Shin, Hi-Deok Lee, Sung Soo Park, Kijun Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 10:3185-3188
In this work, we have fabricated TIPS-pentacene TFTs with conductive polymer (3,4-ethylenedioxythiophene):poly(4-stylenesulfonate) (PEDOT:PSS) source/drain electrodes which is patterned by maskless laser direct patterning (LDP). The 5-microm resoluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::885e05f9b5332fc95461177ed5df125a
https://doi.org/10.1166/jnn.2010.2248
https://doi.org/10.1166/jnn.2010.2248
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 22:1095-1099
As a substitute material for silicon, we synthesized few layer graphene (FLG) by CVD process with a 300-nm-thick nickel film deposited on the silicon substrate and found out the lowest temperature for graphene synthesis. Raman spectroscopy study show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdd46d20e71dc2ab4dbef8a023d8cf8a
https://doi.org/10.4313/jkem.2009.22.12.1095
https://doi.org/10.4313/jkem.2009.22.12.1095
Autor:
Shi-Guang Li, Ga-Won Lee, Ying-Ying Zhang, Jungwoo Oh, Jin-Suk Wang, In-Shik Han, Kee-Young Park, Hi-Deok Lee, Hong-Sik Shin, Raj Jammy, Soon-Yen Jung, Prashant Majhi
Publikováno v:
Journal of the Korean Physical Society. 55:1026-1030
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3939f90f3342f218bc68d303cf8a8c2f
https://doi.org/10.3938/jkps.55.1026
https://doi.org/10.3938/jkps.55.1026
Autor:
Ying-Ying Zhang, Prashant Majhi, Shi Guang Li, Kee Young Park, Soon Yen Jung, J. Oh, Raj Jammy, Kun Joo Park, Hi Deok Lee, Min-Ho Kang, Ga-Won Lee, Jin Suk Wang
Publikováno v:
Journal of the Korean Physical Society. 55:221-226
Hydrogen (H) ion shower doping was proposed to improve the thermal stability of nickel germanide (NiGe), and its effects were analyzed in depth. As the post-germanidation annealing temperature was increased, the sheet resistance (Rsh) of the undoped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afe3f54316479a6ab1bf0274233b3a61
https://doi.org/10.3938/jkps.55.221
https://doi.org/10.3938/jkps.55.221
Autor:
Ying-Ying Zhang, Jin-Suk Wang, Ga-Won Lee, Hi-Deok Lee, Sun-Kyu Kong, Hong-Sik Shin, Shi-Guang Li, Kee-Young Park, Soon-Yen Jung
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 22:457-461
In this paper, barrier height between Ni-silicide and source/drain is reduced utilizing Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. It is shown that the barrier height is decreased by Pd incorporation and is dependent on the Pd thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d156bbe9dcaac006e593f326ff15d22
https://doi.org/10.4313/jkem.2009.22.6.457
https://doi.org/10.4313/jkem.2009.22.6.457
Autor:
Hi-Deok Lee, Won-Ho Choi, In-Shik Han, Yoon Ha Jeong, Ying-Ying Zhang, Chang Yong Kang, Byoung Hun Lee, Hyuk-Min Kwon, R. Jammy, Gennadi Bersuker, Min-Ki Na, Jin-Suk Wang, Yong-Goo Kim
Publikováno v:
IEEE Electron Device Letters. 30:298-301
Time-dependent dielectric breakdown (TDDB) characteristics of La2O3-doped high-k dielectric in Hf-based high-k/TaN metal gate stack were studied. Unlike the abrupt breakdown in the conventional SiO2 , dielectric breakdown behaviors of La-incorporated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a199c70f9b7d4c994519efd96174a7b
https://doi.org/10.1109/led.2008.2012272
https://doi.org/10.1109/led.2008.2012272
Autor:
Min Ki Na, Jin-Suk Wang, Byoung Hun Lee, Jungwoo Oh, Ook Sang Yoo, Prashant Majhi, Kyung Seok Min, Hyuk-Min Kwon, Kyong Taek Lee, H-H. Tseng, Hi-Deok Lee, Chang Yong Kang, Raj Jammy
Publikováno v:
Microelectronic Engineering. 86:259-262
The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si pMOSFETs. A Ge pMOSFET with a Si cap shows a lower subthreshold slope (SS), higher transconduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54356a8cc8bfe72c9f5dc9aaf96ea32a
https://doi.org/10.1016/j.mee.2008.04.024
https://doi.org/10.1016/j.mee.2008.04.024
Autor:
Jungwoo Oh, Hsing-Huang Tseng, Jin Suk Wang, Chang Yong Kang, Min Ki Na, B. H. Lee, Hi Deok Lee, Hyuk-Min Kwon, Ook Sang Yoo, In Shik Han, Prashant Majhi, Raj Jammy, Won Ho Choi
Publikováno v:
Materials Science and Engineering: B. :102-105
We demonstrated the effect of post-metallization annealing and Si interlayer thickness on Ge MOS capacitor on Ge-on-Si substrate with HfO2/TaN. Ge outdiffusion and oxygen interdiffusion were completely suppressed by thick Si interfacial layer. As a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d88b1a6400bdf493f0c2d2129558cb6
https://doi.org/10.1016/j.mseb.2008.06.031
https://doi.org/10.1016/j.mseb.2008.06.031
Autor:
In-Shik Han, Yeong-Cheol Kim, Ying-Ying Zhang, Kee-Young Park, Soon-Yen Jung, Shi-Guang Li, Jae-Jun Kim, Jin-Suk Wang, Ga-Won Lee, Zhun Zhong, Hong-Sik Shin, Hi-Deok Lee
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 21:733-737
In this paper, Ni-Co alloy was used to improve thermal stability of Ni Germanide. It was found that uniform germanide is obtained on epitaxial Ge-on-Si substrate by employing Ni-Co alloy. Moreover, neither agglomeration nor penetration is observed du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52e3cfd602bd5f3963238b1ab1f905f2
https://doi.org/10.4313/jkem.2008.21.8.733
https://doi.org/10.4313/jkem.2008.21.8.733