Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jin Su Baek"'
Publikováno v:
Journal of Asian Ceramic Societies, Vol 9, Iss 3, Pp 1083-1090 (2021)
In this study, MnO2-doped 0.96Pb(Zr0.515,Ti0.485)O3-0.04Pb(Sb0.5,Nb0.5)O3 (0.96PZT-0.04PSN) hard piezoelectric ceramics were fabricated by employing a conventional mixed-oxide process. Hard piezoelectric materials are suitable for mechanical device a
Externí odkaz:
https://doaj.org/article/03645bf7a38949d7abe1a4975773bb9b
Publikováno v:
Nanomaterials, Vol 13, Iss 1, p 45 (2022)
In this study, modeling of optimized lattice mismatch by carbon-dioxide annealing on (In, Ga) co-doped ZnO multi-deposition thin films was investigated with crystallography and optical analysis. (In, Ga) co-doped ZnO multi-deposition thin films with
Externí odkaz:
https://doaj.org/article/8c4ff1785c174333b39363c7b30ed892
Publikováno v:
Journal of Asian Ceramic Societies, Vol 9, Iss 3, Pp 1083-1090 (2021)
In this study, MnO2-doped 0.96Pb(Zr0.515,Ti0.485)O3-0.04Pb(Sb0.5,Nb0.5)O3 (0.96PZT-0.04PSN) hard piezoelectric ceramics were fabricated by employing a conventional mixed-oxide process. Hard piezoelectric materials are suitable for mechanical device a
Autor:
Jin Su Baek, Jung-Hyuk Koh
Publikováno v:
Journal of Alloys and Compounds. 898:162811
In this paper, we have studied the correlation between the Curie temperature and tolerance factor of the (1-x)BHT-xBCT system. In a perovskite system, the distortion between the lattice parameters, a and c, can be used to investigate the tolerance fa
Publikováno v:
Coatings, Vol 11, Iss 1248, p 1248 (2021)
Coatings
Volume 11
Issue 10
Coatings
Volume 11
Issue 10
CeO2 and Y2O3 were co-doped to (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 ceramics and sintered by conventional solid-state reaction process to form x wt.% CeO2-y wt.% Y2O3 doped (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 (CexYy-BCZT) ceramics. The effects of different contents
Publikováno v:
Coatings
Volume 11
Issue 10
Coatings, Vol 11, Iss 1220, p 1220 (2021)
Volume 11
Issue 10
Coatings, Vol 11, Iss 1220, p 1220 (2021)
As a wide energy band gap semiconductor, a Ga2O3 thin film was prepared by the sol–gel process with different annealing processes. Since Ga2O3 is a type of metal oxide structure, an oxygen annealing process can be considered to remove oxygen defect