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Investigation of Heavy Ion Irradiation Effects on Charge Trapping Memory Capacitor by C-V Measurement

Autor: Qi-yu Chen, Xi-rong Yang, Zong-zhen Li, Jin-shun Bi, Kai Xi, Zhen-xing Zhang, Peng-fei Zhai, You-mei Sun, Jie Liu

Publikováno v: Chinese Physics B.

Heavy ion irradiation effects on charge trapping memory (CTM) capacitors with TiN/Al2O3/HfO2/Al2O3/HfO2/SiO2/p-Si structure have been investigated. The ion induced interface charges and oxide trap charges were calculated and analyzed by capacitance-v

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fc38c85c03a44c382486d4f6e9b72144
https://doi.org/10.1088/1674-1056/acae78

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28nm 4Mb 1T-1MTJ STT-MRAM Circuits with Ultra-low Power Read Scheme

Autor: Jin Shun Bi, Bo Li, Kai Xi, Si Wen Zheng

Publikováno v: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).

4Mb 1T-1MTJ STT-MRAM based on 28nm CMOS process has been designed. To improve reading performance, a novel sense amplifier structure, achieving ultra-low power consumption, has been proposed. The read power consumption is as low as 1pJ/bit. The simul

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7d7cba251e7eb5d041a30e6083fd4512
https://doi.org/10.1109/icsict49897.2020.9278155

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PBTI stress-induced 1/f noise in n-channel FinFET*

Autor: Gang Wang, Jin-Shun Bi, Dan-Yang Chen, Kai Xi

Publikováno v: Chinese Physics B. 29:128501

The influence of positive bias temperature instability (PBTI) on 1 / f noise performance is systematically investigated on n-channel fin field-effect transistor (FinFET). The FinFET with long and short channel (L = 240 nm, 16 nm respectively) is char

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::83cfa74f1e5de4a52c9992ab6128691b
https://doi.org/10.1088/1674-1056/abaee4

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