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Autor:
B. Sriram Shastry, Christos Panagopoulos, Tai Kong, Sreemanta Mitra, John Y. Shin, Pinaki Sengupta, Paul C. Canfield, Sai Sunku, Jin Quan Ng, Jeremy Goh Swee Kang
Publikováno v:
Physical Review B. 99
The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75c798e9926bfe93f7c06dedfad2c60d
https://doi.org/10.1103/physrevb.99.045119
https://doi.org/10.1103/physrevb.99.045119
