Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jin Oh Yu"'
Publikováno v:
Journal of Korean Society of Steel Construction. 32:235-246
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1532b94b815883699a36ae56067e453b
https://doi.org/10.7781/kjoss.2020.32.4.235
https://doi.org/10.7781/kjoss.2020.32.4.235
Autor:
Young-Gun Ko, Il Kwon Kim, Hee-Sung Kang, Sung Bae Park, Kwang-Il Kim, Jin Oh Yu, Young Wug Kim, Kwang Pyuk Suh
Publikováno v:
IEEE Journal of Solid-State Circuits. 34:1436-1445
A 0.25-/spl mu/m, four-layer-metal, 1.5-V, 600-MHz, fully depleted (FD) silicon-on-insulator (SOI) CMOS 64-bit ALPHA1 microprocessor integrating 9.66 million transistors on a 209-mm/sup 2/ silicon die has been developed leveraging the existing bulk d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fb1671b2765654163ed42fbb7039296
https://doi.org/10.1109/4.799847
https://doi.org/10.1109/4.799847
Autor:
Jin Oh Yu, Kurn Jong Bae, Kyung Wook Lee, Il Kwon Kim, Young-Gun Ko, Uin Chung, Kwang Pyk Suh, Sung Bae Park, Kwnag Il Kim, Young Wug
Publikováno v:
1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).
More and faster transistors with less power and lower voltage create many opportunities. As a microprocessor technology advances beyond sub-quarter micron, the performance benefits from scaling down tapers off. The combination of short-channel effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49069c0c884cfde7a7f6ac4743cb24aa
https://doi.org/10.1109/isscc.1999.759342
https://doi.org/10.1109/isscc.1999.759342
Autor:
Sung Bae Park, Young Wug Kim, Young Gun Ko, Kwang Il Kim, Il Kwon Kim, Hee-Sung Kang, Jin Oh Yu, Kwang Pyuk Suh
Publikováno v:
IEEE Journal of Solid-State Circuits; Nov1999, Vol. 34 Issue 11, p1436-1445, 10p
Autor:
Young Wug, Sung Bae Park, Young Gun Ko, Kwnag Il Kim, Il Kwon Kim, Kurn Jong Bae, Kyung Wook Lee, Jin Oh Yu, Uin Chung, Kwang Pyk Suh
Publikováno v:
1999 IEEE International Solid-State Circuits Conference Digest of Technical Papers ISSCC First Edition (Cat No99CH36278); 1999, p432-433, 2p