Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Jin Joo Ryu"'
Autor:
Kanghyeok Jeon, Jin Joo Ryu, Seongil Im, Hyun Kyu Seo, Taeyong Eom, Hyunsu Ju, Min Kyu Yang, Doo Seok Jeong, Gun Hwan Kim
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-13 (2024)
Abstract Memristor-integrated passive crossbar arrays (CAs) could potentially accelerate neural network (NN) computations, but studies on these devices are limited to software-based simulations owing to their poor reliability. Herein, we propose a se
Externí odkaz:
https://doaj.org/article/64286c995cc645499a041ed1815c8295
Autor:
Hyun Kyu Seo, Jin Joo Ryu, Su Yeon Lee, Kanghyoek Jeon, Hyunchul Sohn, Gun Hwan Kim, Min Kyu Yang
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 8, Pp n/a-n/a (2023)
Abstract The immense increase of unstructured data require novel computing systems that can process the input data with low power and parallel processing. This functionality is similar to that of human brains that are composed of numerous neurons, sy
Externí odkaz:
https://doaj.org/article/d7c32e4807a34a36a0dc3fc2f026774c
Autor:
Kanghyeok Jeon, Jeeson Kim, Jin Joo Ryu, Seung-Jong Yoo, Choongseok Song, Min Kyu Yang, Doo Seok Jeong, Gun Hwan Kim
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-15 (2021)
Memory-centric computing refers to computing designs where the memory, rather than the processor is central in the architecture. Here, the authors demonstrate a self-rectifying resistive memory cell that exhibits impressive endurance, and low power c
Externí odkaz:
https://doaj.org/article/df7a953c2ed84c2c82ccbabc034c41c7
Publikováno v:
Advanced Electronic Materials, Vol 4, Iss 12, Pp n/a-n/a (2018)
Abstract Here, an optimized method for energy‐efficient and highly reliable multibit operation in a Au/Al2O3/HfO2/TiN resistive switching (RS) device is investigated. A thin Al2O3 layer inserted between the top electrode and the HfO2 RS layer in a
Externí odkaz:
https://doaj.org/article/1abd13446f52491e826ffb4c34b1479a
Autor:
Kun Yang, Gi-Yeop Kim, Jin Joo Ryu, Dong Hyun Lee, Ju Yong Park, Se Hyun Kim, Geun Hyeong Park, Geun Taek Yu, Gun Hwan Kim, Si Young Choi, Min Hyuk Park
Publikováno v:
Materials Science in Semiconductor Processing. 164:107565
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b22434e9cb7323b96721c4550d1a5fdb
https://doi.org/10.1016/j.mssp.2023.107565
https://doi.org/10.1016/j.mssp.2023.107565
Autor:
Doo Seok Jeong, Choongseok Song, Jeeson Kim, Min Kyu Yang, Gun Hwan Kim, Seung-Jong Yoo, Kanghyeok Jeon, Jin Joo Ryu
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-15 (2021)
Nature Communications
Nature Communications
Conventional computing architectures are poor suited to the unique workload demands of deep learning, which has led to a surge in interest in memory-centric computing. Herein, a trilayer (Hf0.8Si0.2O2/Al2O3/Hf0.5Si0.5O2)-based self-rectifying resisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f625e4f31d682f465847cf417b16b2c
https://doaj.org/article/df7a953c2ed84c2c82ccbabc034c41c7
https://doaj.org/article/df7a953c2ed84c2c82ccbabc034c41c7
Publikováno v:
ACS Applied Materials & Interfaces. 11:8234-8241
Fully "Erase-free" multi-bit operation was demonstrated in a W/HfO2/TiN-stacked resistive switching device. The term Erase-free means that a digital state in a multi-bit operation can be achieved without initializing the device resistance state when
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::769f8156cb8102899d539fc33e837db2
https://doi.org/10.1021/acsami.8b20035
https://doi.org/10.1021/acsami.8b20035
Publikováno v:
Advanced Materials Interfaces. 9:2200392
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b261f9c22da4b77d0d5a735dd1d5ab4
https://doi.org/10.1002/admi.202200392
https://doi.org/10.1002/admi.202200392
Autor:
Heenang Choi, Bo Keun Park, Gun Hwan Kim, Taek-Mo Chung, Raphael Edem Agbenyeke, Wooseok Song, Doo Seok Jeong, Jin Joo Ryu, Seung-Jong Yoo, Taeyong Eom, Kanghyeok Jeon
Publikováno v:
Applied Surface Science. 577:151936
2-dimensional materials are highlighted in various electronic device applications due to their tunable and unique anisotropic physical characteristics induced by inherent low-dimensional nature. Herein, a 2-dimensional layered structure of SnS2 is ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6d63b189646b16de9afd3aad3124906
https://doi.org/10.1016/j.apsusc.2021.151936
https://doi.org/10.1016/j.apsusc.2021.151936
Publikováno v:
ACS applied materialsinterfaces. 11(8)
Fully "Erase-free" multi-bit operation was demonstrated in a W/HfO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2ec3b858e026bd1c922e3363dd5ed21d
https://pubmed.ncbi.nlm.nih.gov/30706706
https://pubmed.ncbi.nlm.nih.gov/30706706