Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jin Ji Dai"'
Publikováno v:
Nanomaterials, Vol 13, Iss 21, p 2884 (2023)
The nanotribological properties of aluminum gallium nitride (AlxGa1−xN) epitaxial films grown on low-temperature-grown GaN/AlN/Si substrates were investigated using a nanoscratch system. It was confirmed that the Al compositions played an important
Externí odkaz:
https://doaj.org/article/ced35db4c2ff45b28cc3e2568232359f
Autor:
Cheng-Wei Liu, Jin-Ji Dai, Ssu-Kuan Wu, Nhu-Quynh Diep, Sa-Hoang Huynh, Thi-Thu Mai, Hua-Chiang Wen, Chi-Tsu Yuan, Wu-Ching Chou, Ji-Lin Shen, Huy-Hoang Luc
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Abstract Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of
Externí odkaz:
https://doaj.org/article/ab219f9fc0b54390a040ed381c155c46
Autor:
Jin-Ji Dai, Thi Thu Mai, Ssu-Kuan Wu, Jing-Rong Peng, Cheng-Wei Liu, Hua-Chiang Wen, Wu-Ching Chou, Han-Chieh Ho, Wei-Fan Wang
Publikováno v:
Nanomaterials, Vol 11, Iss 7, p 1766 (2021)
The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the samp
Externí odkaz:
https://doaj.org/article/a8cd7a776808476291d8e78add2dc1af
Autor:
Jin-Ji Dai, Thi Thu Mai, Umeshwar Reddy Nallasani, Shao-Chien Chang, Hsin-I Hsiao, Ssu-Kuan Wu, Cheng-Wei Liu, Hua-Chiang Wen, Wu-Ching Chou, Chieh-Piao Wang, Luc Huy Hoang
Publikováno v:
Materials; Volume 15; Issue 6; Pages: 2058
The high electron mobility transistor (HEMT) structures on Si (111) substrates were fabricated with heavily Fe-doped GaN buffer layers by metalorganic chemical vapor deposition (MOCVD). The heavy Fe concentrations employed for the purpose of highly i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f9c81e3eb5a7e2d695ebeebfae68047
https://pubmed.ncbi.nlm.nih.gov/35329508
https://pubmed.ncbi.nlm.nih.gov/35329508
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83680bed2a9bea358fae9de0748f8ed4
https://doi.org/10.2139/ssrn.4250984
https://doi.org/10.2139/ssrn.4250984
Autor:
Jing Rong Peng, Jin Ji Dai, Han Chieh Ho, Hua Chiang Wen, Wei Fan Wang, Ssu Kuan Wu, Wu Ching Chou, Thi Thu Mai, Cheng Wei Liu
Publikováno v:
Nanomaterials
Nanomaterials, Vol 11, Iss 1766, p 1766 (2021)
Volume 11
Issue 7
Nanomaterials, Vol 11, Iss 1766, p 1766 (2021)
Volume 11
Issue 7
The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the samp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7285c4f75c74ba078d2395e6d5b32705
http://europepmc.org/articles/PMC8308141
http://europepmc.org/articles/PMC8308141
Autor:
Thi Thu Mai, Ssu Kuan Wu, Hua Chiang Wen, Jin Ji Dai, Jhen Gang Jiang, Wu-Ching Chou, Rong Xuan, Chih Wei Hu, Cheng Wei Liu, Sa Hoang Huynh, Sui An Yen
Publikováno v:
Coatings
Volume 11
Issue 1
Coatings, Vol 11, Iss 16, p 16 (2021)
Volume 11
Issue 1
Coatings, Vol 11, Iss 16, p 16 (2021)
The AlGaN/AlN/GaN high electron mobility transistor structures were grown on a Si (111) substrate by metalorganic chemical vapor deposition in combination with the insertion of a SiNx nano-mask into the low-temperature GaN buffer layer. Herein, the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf9f62ecfb584381bf8b72936c50d065
https://doi.org/10.3390/coatings11010016
https://doi.org/10.3390/coatings11010016
Autor:
Jin-Ji Dai, 戴進吉
95
The pressure dependence of the optical phonon modes of cubic Zn1-xMnxTe (0≦x≦0.22) epilayers was investigated by using high-pressure Raman scattering technique. The pressure-induced metallization of zinc-blende (ZB) Zn1-xMnxTe together wi
The pressure dependence of the optical phonon modes of cubic Zn1-xMnxTe (0≦x≦0.22) epilayers was investigated by using high-pressure Raman scattering technique. The pressure-induced metallization of zinc-blende (ZB) Zn1-xMnxTe together wi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/36105382441189899319
