Zobrazeno 1 - 10
of 5 705
pro vyhledávání: '"Jin Jang"'
Autor:
Md Mobaidul Islam, Arqum Ali, Chanju Park, Taebin Lim, Dong Yeon Woo, Joon Young Kwak, Jin Jang
Publikováno v:
Communications Materials, Vol 5, Iss 1, Pp 1-11 (2024)
Abstract Ferroelectric (FE) field-effect transistors are interesting for their non-destructive readout characteristic and energy efficiency but are difficult to integrate on silicon platforms. Here, FE ZrXAl1−XOY (ZAO) is demonstrated by compressiv
Externí odkaz:
https://doaj.org/article/f464969b1c3d44e883b1b45f0fb5def2
Autor:
Sunaina Priyadarshi, Abidur Rahaman, Mohammad Masum Billah, Sabiqun Nahar, Md. Redowan Mahmud Arnob, Jin Jang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 587-593 (2024)
This article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-I
Externí odkaz:
https://doaj.org/article/fb2941ba9e5f49d489a9986e06338bee
Publikováno v:
Advanced Photonics Research, Vol 5, Iss 4, Pp n/a-n/a (2024)
Amorphous tin oxide (a‐SnOx) is a potential transparent oxide semiconductor candidate for future large‐area electronic applications. The thin‐film transistor (TFT) mobilities reach ≈100 cm2 Vs−1, a mobility higher than other multiple cation
Externí odkaz:
https://doaj.org/article/5eec9573d56441bfb56cac1896f20312
Autor:
Chang Hoon Jeon, Ji Woong Park, Byung Wook Kang, Su Hyuk Jang, Kyung Joon Kwon, Soon Kwang Hong, Yong Min Ha, Jin Jang
Publikováno v:
Journal of Information Display, Vol 24, Iss 3, Pp 169-175 (2023)
We report the heat diffusion on flexible active-matrix organic light-emitting diode (AMOLED) displays. Two-dimensional heat diffusion is used for the heat conduction and convection analysis, generated on the surface of a flexible AMOLED display. The
Externí odkaz:
https://doaj.org/article/aeb189615e7846e8b944b2e69c2d2233
Publikováno v:
Genetics in Medicine Open, Vol 2, Iss , Pp 101763- (2024)
Externí odkaz:
https://doaj.org/article/1b60cadeba6844389a785ce9b9aaa23b
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 10, Pp n/a-n/a (2023)
Abstract High‐performance, coplanar amorphous In0.5Ga0.5O (a‐IGO) thin film transistor (TFT) on a polyimide (PI) substrate deposited by spray pyrolysis (SP) is reported. The SP a‐IGO film deposited at 370 °C has less than 8% nanocrystalline‐
Externí odkaz:
https://doaj.org/article/0b25df36569e4da692cae0afe96062a6
Publikováno v:
Nanomaterials, Vol 13, Iss 17, p 2410 (2023)
Metal-oxide-semiconductor (MOS)-based thin-film transistors (TFTs) are gaining significant attention in the field of flexible electronics due to their desirable electrical properties, such as high field-effect mobility (μFE), lower IOFF, and excelle
Externí odkaz:
https://doaj.org/article/7e9d7688fcfa4e35b76e183dd2de52f3
Autor:
Maria Vasilopoulou, Abd. Rashid bin Mohd Yusoff, Matyas Daboczi, Julio Conforto, Anderson Emanuel Ximim Gavim, Wilson Jose da Silva, Andreia Gerniski Macedo, Anastasia Soultati, George Pistolis, Fabio Kurt Schneider, Yifan Dong, Polina Jacoutot, Georgios Rotas, Jin Jang, Georgios C. Vougioukalakis, Christos L. Chochos, Ji-Seon Kim, Nicola Gasparini
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
Thermally activated delayed fluorescence organic light-emitting diodes (TADF-OLEDs) rely on high triplet energy interlayers to confine excitons, which results in reduced performance. Here, the authors report high-performance blue TADF-OLEDs with belo
Externí odkaz:
https://doaj.org/article/c1766a2ef13946f189e07770d25afd32
Autor:
Su-Min Woo, Ngoc Anh Nguyen, Jeong-Eun Seon, Jin Jang, Su-Min Yee, Ngoc Tan Cao, Harim Choi, Chul-Ho Yun, Hyung-Sik Kang
Publikováno v:
Molecules, Vol 28, Iss 4, p 1851 (2023)
Phloretin and its glycoside phlorizin have been reported to prevent obesity induced by high-fat diet (HFD), but the effect of 3-OH phloretin, a catechol metabolite of phloretin, has not been investigated. In this study, we investigated the anti-obesi
Externí odkaz:
https://doaj.org/article/ea0a244a544f4c6d8121228a159bfc41
Autor:
Mohammad Masum Billah, Abu Bakar Siddik, Jung Bae Kim, Lai Zhao, Soo Young Choi, Dong Kil Yim, Jin Jang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 503-511 (2019)
We studied the impact of grain boundary (GB) protrusion on the electrical properties of low temperature polycrystalline silicon thin film transistors. The analysis of atomic force microscopy and transmission electron microscopy images indicate the gr
Externí odkaz:
https://doaj.org/article/e7a65bb2928e4a5d8f1ad8ea26a50e2f