Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jin Hyun, Ma"'
Autor:
Hyoun Ji Ha, Min Gye Kim, Jin Hyun Ma, Jun Hyung Jeong, Min Ho Park, Seong Jae Kang, Wonsik Kim, Soohyung Park, Seong Jun Kang
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract Low-temperature processing is important for improving the stability and performance of flexible quantum dot light-emitting diodes (QLEDs). In this study, QLEDs were fabricated using poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) as
Externí odkaz:
https://doaj.org/article/e5951d74086249eeab1ee0a71b610851
Autor:
Seong Jae Kang, Jun Hyung Jeong, Jin Hyun Ma, Min Ho Park, Hyoun Ji Ha, Jung Min Yun, Yu Bin Kim, Seong Jun Kang
Publikováno v:
Micromachines, Vol 15, Iss 3, p 318 (2024)
Visible light photodetectors are extensively researched with transparent metal oxide holes/electron layers for various applications. Among the metal oxide transporting layers, nickel oxide (NiO) and zinc oxide (ZnO) are commonly adopted due to their
Externí odkaz:
https://doaj.org/article/6f33764b8c65460ebbca0600402eba5c
Autor:
Hyoun Ji Ha, Seong Jae Kang, Jun Hyung Jeong, Jin Hyun Ma, Min Ho Park, Wonsik Kim, Aelim Ha, Seunghwan Kim, Soohyung Park, Seong Jun Kang
Publikováno v:
ACS Applied Materials & Interfaces; 7/31/2024, Vol. 16 Issue 30, p40139-40148, 10p
Autor:
Jin Hyun Ma, Min Gye Kim, Jun Hyung Jeong, Min Ho Park, Hyoun Ji Ha, Seong Jae Kang, Seong Jun Kang
Publikováno v:
Materials; Volume 16; Issue 11; Pages: 4053
We present a study on the potential use of sulfuric acid-treated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as a viable alternative to indium tin oxide (ITO) electrodes in quantum dot light-emitting diodes (QLEDs). ITO, desp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24b83e42cd4c4f2b9ab700c7391f1655
Autor:
Min Gye Kim, Jae Seung Shin, Jin Hyun Ma, Jun Hyung Jeong, Dong Hee Han, Beom-Su Kim, Woojin Jeon, Yongsup Park, Seong Jun Kang
Publikováno v:
Journal of Materials Chemistry C. 10:7294-7303
Al-doped TiO2 (ATO) interfacial layer improves the charge balance and the performance of quantum-dot light-emitting diodes (QLEDs).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2beebb8b7eb4708525e743dd84c40270
https://doi.org/10.1039/d2tc00678b
https://doi.org/10.1039/d2tc00678b
Autor:
Jae Seung Shin, Mingye Kim, Jin Hyun Ma, Jun Hyung Jeong, Hui Wung Hwang, Jeong Won Kim, Seong Jun Kang
Publikováno v:
Journal of Materials Chemistry C. 10:5590-5597
Vanadium oxide (V2O5) doped with Li (5, 10, and 15 mol%) was synthesized using an easy and low-cost solution process method and was used as a hole-injection layer (HIL) for quantum-dot light-emitting diodes (QLEDs).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23d778de71cc7445706bb6be6dbddf36
https://doi.org/10.1039/d1tc06117h
https://doi.org/10.1039/d1tc06117h
Publikováno v:
Journal of Materials Chemistry C. 10:14770-14777
A visible-light phototransistor have been fabricated by adding a solution-processed thin Al2O3 layer under the ZnO layer to improve the visible-light photodetection.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e091442ddcaaf78b603702086b99f9a
https://doi.org/10.1039/d2tc02500k
https://doi.org/10.1039/d2tc02500k
Autor:
Jun Hyung, Jeong, Min Gye, Kim, Jin Hyun, Ma, Min Ho, Park, Hyoun Ji, Ha, Seong Jae, Kang, Min-Jae, Maeng, Young Duck, Kim, Yongsup, Park, Seong Jun, Kang
Publikováno v:
Materials (Basel, Switzerland). 15(24)
One of the major obstacles in the way of high-performance quantum dot light-emitting diodes (QLEDs) is the charge imbalance arising from more efficient electron injection into the emission layer than the hole injection. In previous studies, a balance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::58e858902d7a74b4402cf0ec1738e714
https://pubmed.ncbi.nlm.nih.gov/36556781
https://pubmed.ncbi.nlm.nih.gov/36556781
Autor:
Jun Hyung Jeong, Jong Hun Yu, Su Been Heo, Jae Seung Shin, Min Gye Kim, Seong Jun Kang, Sungho Park, Jin Hyun Ma, Byung Jun Kim, Tae Yeon Kim
Publikováno v:
Journal of Materials Chemistry C. 9:9650-9658
The wide band gap of oxide semiconductors enables them to generate photocurrents through irradiation with high-energy photons, such as by ultraviolet light. To enhance the photoresponsivity of an oxide semiconductor to visible light, we fabricate a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6250a123d5584bdf3011963e3e6865d
https://doi.org/10.1039/d1tc02088a
https://doi.org/10.1039/d1tc02088a
Autor:
Min Woo Jeong1, Jin Hyun Ma2,3, Jae Seung Shin2,3, Jun Su Kim1, Guorong Ma4, Tae Uk Nam1, Xiaodan Gu4, Seong Jun Kang2,3 junkang@khu.ac.kr, Jin Young Oh1 jyoh@khu.ac.kr
Publikováno v:
Science Advances. 6/23/2023, Vol. 9 Issue 25, p1-10. 10p.