Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Jin Gun Koo"'
Autor:
Jin-Gun Koo, Jong-Il Won, Yil-Suk Yang, Hoon-Soo Park, Jong-Moon Park, Sang-Gi Kim, Tae-moon Roh
Publikováno v:
Journal of IKEEE. 20:220-225
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c28957595ee48d0aacc685f60c10975c
https://doi.org/10.7471/ikeee.2016.20.3.220
https://doi.org/10.7471/ikeee.2016.20.3.220
Publikováno v:
ETRI Journal. 38:244-251
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b21d50b978146b97bd75eb7c9ed223c
https://doi.org/10.4218/etrij.16.2515.0024
https://doi.org/10.4218/etrij.16.2515.0024
Publikováno v:
Journal of the Korean Physical Society. 67:1214-1221
In this paper, we present a new 6-pack power module for a 3-phase inverter that is integrated with the six trench gate double diffused metal-oxide semiconductor field-effect transistor (TDMOS) on a single chip. An integration of each power device is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfa17f1a4c58d4e7c3f9af818fe05c72
https://doi.org/10.3938/jkps.67.1214
https://doi.org/10.3938/jkps.67.1214
Publikováno v:
ETRI Journal. 35:603-609
In this paper, we present a 600-V reverse conducting insulated gate bipolar transistor (RC-IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC-IGBT uses the deep reactive-ion etching trench techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f40f31092e118b78b869ab0df9da9643
https://doi.org/10.4218/etrij.13.1912.0030
https://doi.org/10.4218/etrij.13.1912.0030
Autor:
Jinho Lee, Kyoung Il Na, Jin Gun Koo, Jong-Il Won, Sang Hoon Chai, Sang Gi Kim, Seong Wook Yoo, Hyung-Moo Park, Yil Suk Yang, Hoon Soo Park
Publikováno v:
ETRI Journal. 35:632-637
In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fa7348d1ee3bc49d510cd1b068f7b28
https://doi.org/10.4218/etrij.13.1912.0012
https://doi.org/10.4218/etrij.13.1912.0012
Publikováno v:
ETRI Journal. 35:425-430
In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage (BVDS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88c87c80fd58c276e62f11ed9c7870b5
https://doi.org/10.4218/etrij.13.0112.0246
https://doi.org/10.4218/etrij.13.0112.0246
Publikováno v:
ETRI Journal. 34:962-965
In this letter, we propose a new RESURF stepped oxide (RSO) process to make a semi-superjunction (semi-SJ) trench double-diffused MOSFET (TDMOS). In this new process, the thick single insulation layer (SiO2) of a conventional device is replaced by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd9c63245a0fc8fb943983c7d11f223
https://doi.org/10.4218/etrij.12.0212.0127
https://doi.org/10.4218/etrij.12.0212.0127
Autor:
Yil Suk Yang, Kyoung Il Na, Jong Dae Kim, Jin Gun Koo, Dong Ha Kah, Hoon Soo Park, Jin Ho Lee, Sang Gi Kim
Publikováno v:
Journal of the Korean Physical Society. 60:1552-1556
Gate dielectrics in trench structures for trench gate metal oxide semiconductor field-effect transistor (MOSFET) power devices are very important to realize excellent characteristics. In this paper we describe multiple-layer gate dielectrics for tren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaaa1dfc3273761fde941ce4ac60218a
https://doi.org/10.3938/jkps.60.1552
https://doi.org/10.3938/jkps.60.1552
Publikováno v:
Journal of the Korean Physical Society. 57:802-805
We propose a novel process technology for fabricating a very high density n-channel trench-gate metal oxide silicon field effect transistor (MOSFET) by using an oxide spacer and self-aligned techniques. Due to this nano-scale technology, the cell pit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22d50c7aa0e40f6a7bcc585ffb8c4119
https://doi.org/10.3938/jkps.57.802
https://doi.org/10.3938/jkps.57.802
Publikováno v:
Journal of the Korean Physical Society. 55:982-985
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::862adfccaeab6f1c7e5fcaf5aadfefc8
https://doi.org/10.3938/jkps.55.982
https://doi.org/10.3938/jkps.55.982