Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Jin Bum Kim"'
Autor:
Ji Eun Yu, Ye Chan Joo, Young Seop Chang, Jin Bum Kim, Hong Wook Kim, Hyung Joon Kim, Dong Hoon Koh
Publikováno v:
Journal of Urology. 209
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ccc3479f44c7329136b53ad671075d3
https://doi.org/10.1097/ju.0000000000003248.04
https://doi.org/10.1097/ju.0000000000003248.04
Autor:
Ju Hyun Shin, Taeyoung Ha, Yong Gil Na, Ki Hak Song, Ji Yong Lee, Yun Kyong Hyon, Jae Sung Lim, Hyun Seok Na, Jaegeun Lee, Long Jin, Kiwan Jeon, Jong Mok Park, Seung Woo Yang, Jin-Bum Kim
Publikováno v:
BMC Urology, Vol 20, Iss 1, Pp 1-8 (2020)
BMC Urology
BMC Urology
Background The aims of this study were to determine the predictive value of decision support analysis for the shock wave lithotripsy (SWL) success rate and to analyze the data obtained from patients who underwent SWL to assess the factors influencing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2f43125b90d6b937e0e6e39861560a3
http://link.springer.com/article/10.1186/s12894-020-00662-x
http://link.springer.com/article/10.1186/s12894-020-00662-x
Publikováno v:
International Neurourology Journal, Vol 14, Iss 4, Pp 261-266 (2010)
Purpose To analyze the baseline clinical factors and medication treatment strategy used in cases with medication treatment failure of benign prostatic hyperplasia (BPH). Methods From January 2006 to December 2009, 677 BPH patients with at least 3 mon
Externí odkaz:
https://doaj.org/article/d8c40ea72ee146aa959427ca3bbf605f
Autor:
Ji Young Park, Inkook Jang, Seunghun Lee, Sang-Moon Lee, Seung Min Lee, Hyoung-soo Ko, Gyeom Kim, Dae Sin Kim, Sae-jin Kim, Jin Bum Kim
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Herein, we unveil the deposition and etch mechanism of GeCl 4 on the SiGe surface. At the high temperature, GeCl 4 is dissociated to GeCl 2 and then worked as a deposition source. Thus, the rate determinant step of surface growth is GeCl 4 dissociati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5197d75391656538ad3fd5d8b1e240f9
https://doi.org/10.1109/sispad54002.2021.9592526
https://doi.org/10.1109/sispad54002.2021.9592526
Autor:
Jin-Bum Kim, Seunghee Lee, Jong Mok Park, Jae Sung Lim, Seung Woo Yang, Jaegeun Lee, Ji Yong Lee, Taeyoung Ha, Yong Gil Na, Ki Hak Song, Yun Kyong Hyon, Ju Hyun Shin, Long Jin
Publikováno v:
The Korean Journal of Urological Oncology. 17:110-117
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a01176be301cc6012f91c341130eb03
https://doi.org/10.22465/kjuo.2019.17.2.110
https://doi.org/10.22465/kjuo.2019.17.2.110
Autor:
Jung Yeon Won, Jinyong Kim, Tae-Gon Kim, Sungho Lee, Jin-Bum Kim, Seongpyo Hong, Hyung-Ik Lee, Hyoungsub Kim, Ilgyou Shin, Hoo-Jeong Lee, Seongheum Choi, Ki-Hyun Hwang, Yihwan Kim, Taejin Park
Publikováno v:
Journal of Alloys and Compounds. 788:1013-1020
Pulsed-laser annealing (PLA) was performed on a preformed Pt-doped Ni-rich silicide film (Ni2Si phase), and its microstructural and phase evolution were studied from submelting to melting condition by varying the laser power density (P). Vertically n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7ac1bd392c414c03e234d57aa507ea1
https://doi.org/10.1016/j.jallcom.2019.02.307
https://doi.org/10.1016/j.jallcom.2019.02.307
Autor:
Jin-Bum Kim, Hyangsook Lee, Hoijoon Kim, Taejin Park, Hyunjung Shin, Changdeuck Bae, Eunha Lee, Mirine Leem, Hyoungsub Kim, Wonsik Ahn
Publikováno v:
CrystEngComm. 21:478-486
Non-equilibrium fractal growth of MoS2 was induced by establishing an extremely Mo rich chemical vapor deposition (CVD) environment using a rapid heating rate in a confined reaction space. In addition, a detailed shape evolution mechanism was suggest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::127d921e15ae64671e416cd9ef69380a
https://doi.org/10.1039/c8ce01952e
https://doi.org/10.1039/c8ce01952e
Autor:
Si Young Lee, Jin-Bum Kim, Yihwan Kim, Ki-Hyun Hwang, Sang-Jin Hyun, Taejin Park, Hyoungsub Kim, Chul-Sung Kim, Seounghoon Lee
Publikováno v:
IEEE Transactions on Electron Devices. 66:389-394
The importance of optimizing the millisecond annealing (MSA) temperature for Pt-doped NiSi ( ${\mathrm {Ni}}_{{1}-{x}}$ Pt x Si) contact formation was highlighted by implementing and characterizing the ${\mathrm {Ni}}_{{1}-{x}}$ Pt x Si films in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1f2a677799e9ee44afedd718367b012
https://doi.org/10.1109/ted.2018.2878871
https://doi.org/10.1109/ted.2018.2878871
Autor:
Yun Jae Lee, Bosung Kim, Hyoungsub Kim, Hyung-Ik Lee, Joong Jung Kim, Seongpyo Hong, Younheum Jung, Taejin Park, Jinyong Kim, Sungho Lee, Jung Yeon Won, Eunha Lee, Yihwan Kim, Cheol-Woong Yang, Seongheum Choi, Ki-Hyun Hwang, Jin-Bum Kim
Publikováno v:
Journal of Alloys and Compounds. 771:124-130
Pt-doped NiSi‒NiSi2 thin films in a uniform lamellar structure with a periodicity on the scale of a few tens of nanometers were formed on Si(001) substrates using a continuous laser scanning process. When the Pt-doped NiSi film was melted at high t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e943abf928e108f3250b09635c167425
https://doi.org/10.1016/j.jallcom.2018.08.257
https://doi.org/10.1016/j.jallcom.2018.08.257
Autor:
Hyoungsub Kim, Jin-Bum Kim, Yoo Jeong-Ho, Ilgyou Shin, Jung-Hwa Kim, Yihwan Kim, Seongheum Choi, Ki-Hyun Hwang, Jinyong Kim, Hyangsook Lee, Taejin Park, Eunha Lee, Seok-Hoon Kim
Publikováno v:
Microelectronic Engineering. 205:14-19
The objective of this study was to determine detailed microstructure of a Ni1–xPtxSi film formed via a melting/quenching process using high temperature laser annealing on a Si(001) substrate. The orthorhombic Ni1–xPtxSi film was found to be able
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a4a3218f9d36eaa510d6b511b28bb12
https://doi.org/10.1016/j.mee.2018.11.009
https://doi.org/10.1016/j.mee.2018.11.009