Zobrazeno 1 - 10
of 493
pro vyhledávání: '"Jin‐Wei Shi"'
Publikováno v:
Photonics, Vol 11, Iss 8, p 724 (2024)
Photon-number-resolving detectors are in high demand for applications in photonic quantum technology. In this study, we demonstrate the photon-number-resolving capabilities of our self-developed, highly efficient InGaAs/InAlAs single-photon avalanche
Externí odkaz:
https://doaj.org/article/8a72f9954ac746b3ae4c1047b552153c
Autor:
Zohauddin Ahmad, Po-Shun Wang, Naseem, Yu-Cyuan Huang, Yan-Chieh Chang, You-Chia Chang, Yi-Shan Lee, Jin-Wei Shi
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-12 (2022)
Abstract We demonstrate a novel avalanche photodiode (APD) design which fundamentally relaxes the trade-off between responsivity and saturation-current performance at receiver end in coherent system. Our triple In0.52Al0.48As based multiplication (M-
Externí odkaz:
https://doaj.org/article/fb88a36f32f54f0eacf7012e4180829b
Autor:
Zuhaib Khan, Min-Long Wu, Cheng-Wei Lin, Cheng-Chun Chen, Chia-Jui Chang, Tien-Chang Lu, Nikolay Ledentsov Jr., Nikolay Ledentsov, Jin-Wei Shi
Publikováno v:
Advanced Photonics Research, Vol 4, Iss 9, Pp n/a-n/a (2023)
Herein, it is shown how the novel layout and arrangement of electrodes of a vertical‐cavity surface‐emitting laser (VCSEL) array can simultaneously improve its high‐speed data transmission performance and the brightness of the output beam. In c
Externí odkaz:
https://doaj.org/article/5809b6184db04690944102eaa3a105dd
Autor:
Zuhaib Khan, Yung-Hao Chang, Te-Lieh Pan, Yaung-Cheng Zhao, Yen-Yu Huang, Chia-Hung Lee, Jui-Sheng Chang, Cheng-Yi Liu, Cheng-Yuan Lee, Chao-Yi Fang, Jin-Wei Shi
Publikováno v:
IEEE Access, Vol 10, Pp 2303-2317 (2022)
The development of high-speed and high-brightness vertical-cavity surface-emitting lasers (VCSELs), which can serve as an efficient light source for optical wireless communication (OWC), play a crucial role in growth of the next generation of wireles
Externí odkaz:
https://doaj.org/article/9b672e7e02074b8f95d8ecaca663c1d9
Publikováno v:
Photonics, Vol 10, Iss 9, p 976 (2023)
We would like to celebrate Prof [...]
Externí odkaz:
https://doaj.org/article/4b0d12a3ab6d4e3bb7145e2d92f2f2c8
Publikováno v:
IET Nanodielectrics, Vol 4, Iss 1, Pp 21-26 (2021)
Abstract Avalanche photodiode (APD) is an indispensable receiver component because of its high bandwidth and low noise performance. Recently, APD reliability, under harsh environmental stresses such as high heat and humidity, has drawn great interest
Externí odkaz:
https://doaj.org/article/77e721bf893e4fd7be89421ca81ec36c
Publikováno v:
IEEE Access, Vol 9, Pp 32979-32985 (2021)
We have incorporated a novel design of stepwise electric field in the multiplication layers to the InGaAs/InAlAs single photon avalanche diodes (SPADs). The stepwise electric field profile aims to circumvent the dilemma between dark count rate, after
Externí odkaz:
https://doaj.org/article/c45827106ecd4960a973ac3853154f19
Autor:
Zohauddin Ahmad, Yan-Min Liao, Sheng-I Kuo, You-Chia Chang, Rui-Lin Chao, Naseem, Yi-Shan Lee, Yung-Jr Hung, Huang-Ming Chen, Jyehong Chen, Jiun-In Guo, Jin-Wei Shi
Publikováno v:
IEEE Access, Vol 9, Pp 85661-85671 (2021)
In this work, we demonstrate the high-power and high-responsivity performance of the dual multiplication (M-) layers in In0.52Al0.48As based avalanche photodiode (APD). The dual M-layer design in our APD structure effectively constrains the multiplic
Externí odkaz:
https://doaj.org/article/a3020b191ee64b2ca284057f3d39c2de
Publikováno v:
IEEE Access, Vol 8, Pp 80836-80841 (2020)
A three-port optical phase-shifter and Mach-Zehnder modulator (MZM) based on PNP-type bipolar junction transistor (BJT) is demonstrated. Significant plasma (injected carrier) induced changes of the refractive index for the optical waveguide become po
Externí odkaz:
https://doaj.org/article/d6d1cf0fa50944d49284bbf8c94a6ae8
Autor:
Zuhaib Khan, Nikolay Ledentsov, Lukasz Chorchos, Jie-Chen Shih, Yung-Hao Chang, Nikolay N. Ledentsov, Jin-Wei Shi
Publikováno v:
IEEE Access, Vol 8, Pp 72095-72101 (2020)
Using the Zn-diffusion and oxide-relief techniques with the optimized aperture sizes, we demonstrate a novel single-mode 940 nm vertical-cavity surface-emitting laser (VCSEL) with high brightness performance. The highly single-mode (SM) output optica
Externí odkaz:
https://doaj.org/article/dc7f491040624bfab705b1bc9c410119