Zobrazeno 1 - 10
of 297
pro vyhledávání: '"Jin‐Hyuk Bae"'
Autor:
Jin Park, Sang Ho Lee, So Ra Jeon, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Gang San Yun, Won Suk Koh, Jaewon Jang, Jin-Hyuk Bae, Young Jun Yoon, In Man Kang
Publikováno v:
Results in Physics, Vol 63, Iss , Pp 107873- (2024)
In this study, a complementary field-effect transistor (CFET) based on a polycrystalline silicon (poly-Si) stacked-nanosheet (NS) structure with a grain boundary (GB) is designed and analyzed using a technology computer-aided design (TCAD) simulation
Externí odkaz:
https://doaj.org/article/ea749661f4b64898bf056f0c4bfd61a4
Publikováno v:
Advanced Science, Vol 11, Iss 9, Pp n/a-n/a (2024)
Abstract With increasing demand for wearable electronics capable of computing huge data, flexible neuromorphic systems mimicking brain functions have been receiving much attention. Despite considerable efforts in developing practical neural networks
Externí odkaz:
https://doaj.org/article/0034b7924fc047feb4a0ba3a28d1ba09
Autor:
Sangwoo Lee, Yoonjin Cho, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang
Publikováno v:
Nanomaterials, Vol 14, Iss 9, p 791 (2024)
In this study, a Y2O3 insulator was fabricated via the sol–gel process and the effect of precursors and annealing processes on its electrical performance was studied. Yttrium(III) acetate hydrate, yttrium(III) nitrate tetrahydrate, yttrium isopropo
Externí odkaz:
https://doaj.org/article/79be02e66d62416583483c08bae04bae
Autor:
Yoonjin Cho, Sangwoo Lee, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang
Publikováno v:
Nanomaterials, Vol 14, Iss 6, p 532 (2024)
Herein, sol–gel-processed Y2O3 resistive random-access memory (RRAM) devices were fabricated. The top electrodes (TEs), such as Ag or Cu, affect the electrical characteristics of the Y2O3 RRAM devices. The oxidation process, mobile ion migration sp
Externí odkaz:
https://doaj.org/article/0360bf6111364eaeae535f26a9bc07ca
Autor:
Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Do-Kyung Kim, Jin-Hyuk Bae
Publikováno v:
Nanomaterials, Vol 14, Iss 5, p 466 (2024)
The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial thr
Externí odkaz:
https://doaj.org/article/5e84f4fc6fef43b4afe2a5659348c1e3
Autor:
Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract In this paper, a capacitorless one-transistor dynamic random access memory (1 T-DRAM) based on a polycrystalline silicon (poly-Si) metal-oxide-semiconductor field-effect transistor with the asymmetric dual-gate (ADG) structure is designed an
Externí odkaz:
https://doaj.org/article/6a171702f7b849b0ad8648c30f07f5c0
Autor:
Hyeongwook Kim, Miseong Kim, Aejin Lee, Hea‐Lim Park, Jaewon Jang, Jin‐Hyuk Bae, In Man Kang, Eun‐Sol Kim, Sin‐Hyung Lee
Publikováno v:
Advanced Science, Vol 10, Iss 19, Pp n/a-n/a (2023)
Abstract Hardware neural networks with mechanical flexibility are promising next‐generation computing systems for smart wearable electronics. Several studies have been conducted on flexible neural networks for practical applications; however, devel
Externí odkaz:
https://doaj.org/article/2146babd6fd0430c8b702a3c4edf9e73
Publikováno v:
Nanomaterials, Vol 13, Iss 23, p 2986 (2023)
The density of donor-like state distributions in solution-processed indium–zinc-oxide (IZO) thin-film transistors (TFTs) is thoroughly analyzed using photon energy irradiation. This study focuses on quantitatively calculating the distribution of de
Externí odkaz:
https://doaj.org/article/89f7ae799e3e42daa5aec50cc5da1576
Publikováno v:
Nanomaterials, Vol 13, Iss 23, p 2991 (2023)
Lead-free Cs2AgBiBr6 double perovskite has emerged as a promising new-generation photovoltaic, due to its non-toxicity, long carrier lifetime, and low exciton binding energies. However, the low power conversion efficiency, due to the high indirect ba
Externí odkaz:
https://doaj.org/article/e2068d9e8da349fdaed2c8d8a20c7a94
Autor:
Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Minsu Park, Kwangeun Kim, Jaewon Jang
Publikováno v:
ACS Omega, Vol 7, Iss 12, Pp 10262-10267 (2022)
Externí odkaz:
https://doaj.org/article/a20f6596003b4834b7fc4b45525c0c12