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pro vyhledávání: '"Jin‐Guo Yang"'
Autor:
Jin-guo Yang, 楊進國
97
In this thesis, we present the Schrodinger-Wu equation. Next, we find a solution of the Schrodinger-Wu equation.
In this thesis, we present the Schrodinger-Wu equation. Next, we find a solution of the Schrodinger-Wu equation.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/96759168140141050965
Publikováno v:
In International Journal of Heat and Mass Transfer November 2016 102:1050-1055
Autor:
Rui-Qi Png, Peter K. H. Ho, Wei-Ling Seah, Ryosuke Matsubara, Jun-Kai Tan, Mi Zhou, Han Guo, Jin-Guo Yang, Lay-Lay Chua, Masakazu Nakamura
Publikováno v:
Organic Electronics. 37:491-497
It is well known that contact resistance R c limits the performance of organic field-effect transistors (OFETs) that have high field-effect mobilities (μ FET ≳ 0.3 cm 2 V −1 s −1 ) and short channel lengths ( L ch ≲ 30 μm). The usual transf
Publikováno v:
Applied Mechanics and Materials. 364:509-512
For hard, brittle and difficult-to-cut materials, the technology heating auxiliary grinding has a significant role in improving productivity and reducing costs. Using different thermal loads and different ways of cooling to load granite,we carried ou
Publikováno v:
Advanced Materials Research. :1137-1140
Thermally enhanced machining is an effective way of processing hard and brittle materials. The Wear performance of diamond saw blade cutting granite plate by Plasma-assisted heating is studied by a homemade experimental device. Investigation of the b
Publikováno v:
International Journal of Energy Research. 28:433-448
Local instantaneous temperature signal and time-averaged heat transfer coefficient were measured using a miniature heat transfer probe. The experiments were carried out in the bottom zone of a 5.8m high, 0.3m×0.5m rectangular cross-section circulati
Autor:
Jin-Guo Yang, Wei-Ling Seah, Peter K. H. Ho, Han Guo, Lay-Lay Chua, Chao Zhao, Cindy Guanyu Tang, Venu Keerthi, Mi Zhou, Rui-Qi Png
Publikováno v:
Advanced Functional Materials. 27:1606291
Contact resistance limits the performance of organic field-effect transistors, especially those based on high-mobility semiconductors. Despite intensive research, the nature of this phenomenon is not well understood and mitigation strategies are larg
Autor:
Xuejian Liu, Liang-Jun Yin, Wei Yu, Lu-Yuan Hao, Jin-Guo Yang, Li-Xun Yang, Xin Xu, Xiu-Fang Yang
Publikováno v:
Journal of the American Ceramic Society.
Eu2+-doped aluminum nitride (AlN) phosphors were prepared by a carbothermal reduction process in ambient N2 atmosphere. Their structures and luminescence properties were studied in terms of the reaction temperature, soaking time, Eu2+ concentration,
Publikováno v:
Medicine
Tropisetron is an adjuvant for butorphanol used in intravenous patient-controlled analgesia (PCA) and has been reported to provide superior pain control. It is efficacious in reducing the incidence of postoperative nausea and vomiting. However, this
Publikováno v:
Applied Physics Letters. 105:193304
The evaporation of metal-film gate electrodes for top-gate organic field-effect transistors (OFETs) limits the minimum thickness of the polymer gate dielectric to typically more than 300 nm due to deep hot metal atom penetration and damage of the die