Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jin'an Shi"'
Autor:
Qi-Kun Xue, Xi Chen, Can-Li Song, Tian Jiang, Jianfeng Wang, Yunyi Zang, Wenhui Duan, Xucun Ma, Qinghua Zhang, Lin Gu, Ke He, Shuai-Hua Ji, Yan Gong, Lili Wang, Zhenyu Wang, Jin’an Shi
Publikováno v:
Advanced Materials. 27:4150-4154
Z. Wang, J. Wang, Y. Zang, Dr. T. Jiang, Y. Gong, Prof. C.-L. Song, Prof. S.-H. Ji, Prof. L.-L. Wang, Prof. K. He, Prof. W. Duan, Prof. X. Ma, Prof. X. Chen, Prof. Q.-K. Xue State Key Laboratory of Low-Dimensional Quantum Physics Department of Physic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0258ea40b7e717dea8d461b6ac7aeeb8
https://doi.org/10.1002/adma.201501676
https://doi.org/10.1002/adma.201501676
Autor:
Qi-Kun Xue, Lishu Liu, Xiaolong Du, Junqiang Li, Lin Gu, Zengxia Mei, Jin’an Shi, Wenxing Huo
Publikováno v:
Journal of Crystal Growth. 420:32-36
We report the growth of single-oriented Cu2O (113) film on faceted MgO (110) substrate by radio-frequency plasma assisted molecular beam epitaxy. A MgO {100} faceted homoepitaxial layer was introduced beforehand as a template for epitaxy of Cu2O film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2959fe1a1c265f1fa74fcb0d1d9d9d1e
https://doi.org/10.1016/j.jcrysgro.2015.03.021
https://doi.org/10.1016/j.jcrysgro.2015.03.021
Publikováno v:
Solid State Communications. 110:645-649
Nonlinear optical absorption of InAs nanocrystals embedded in SiO2, films prepared by radio-frequency magnetron cosputtering was studied by Z-scan technique using a single Gaussian beam of a He–Ne laser (633 nm). Both two-photon absorption and satu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49d1a8f6028c7a38ffd549273fbcf820
https://doi.org/10.1016/s0038-1098(99)00118-0
https://doi.org/10.1016/s0038-1098(99)00118-0
Publikováno v:
Journal of Crystal Growth. 187:197-202
We studied the dependence of photoluminescence induced by carbon contamination on the Ge/GeSi structure. It is found that a carbon and silicon defect complex may be formed in a special structure by opening the in situ high-energy electron diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd8f6d5b6bcb311975512d1ac54f2a9f
https://doi.org/10.1016/s0022-0248(97)00861-0
https://doi.org/10.1016/s0022-0248(97)00861-0
Publikováno v:
Journal of Crystal Growth. 186:480-486
In situ radio-frequency (RF) magnetron cosputtering was used to prepare InAs nanocrystals embedded in SiO 2 matrices. The growth behavior of InAs in the composite films has been studied systematically for the first time by transmission electron micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2be1f5af7d47a48d335a2415083b61bb
https://doi.org/10.1016/s0022-0248(97)00820-8
https://doi.org/10.1016/s0022-0248(97)00820-8