Hydrogenation of p+ poly-Si by Al2O3 nanolayers prepared by atomic layer deposition

Autor: Roel J. Theeuwes, Jimmy Melskens, Wolfhard Beyer, Uwe Breuer, Astrid Gutjahr, Agnes A. Mewe, Bart Macco, Wilhelmus M. M. Kessels

Publikováno v: Journal of Applied Physics, 133(14):145301. American Institute of Physics

Polysilicon (poly-Si) passivating contacts have enabled some of the highest lab-scale crystalline silicon (c-Si) solar cell conversion efficiencies, largely due to their excellent surface passivation quality, which can be aided by means of hydrogenat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19cddcdde3a56ac298a07320b2aa5d8d
https://research.tue.nl/nl/publications/888158bd-28ca-4d05-820e-3ae219ed61ec

POx/Al2O3 Stacks for c-Si Surface Passivation: Material and Interface Properties

Autor: Bart Macco, Wilhelmus J. H. Berghuis, Jimmy Melskens, Wolfhard Beyer, Lachlan E. Black, Dibyashree Koushik, Wilhelmus M. M. Kessels, Roel J. Theeuwes

Publikováno v: ACS applied electronic materials 3(10), 4337-4347 (2021). doi:10.1021/acsaelm.1c00516
ACS Applied Electronic Materials, 3(10), 4337-4347. American Chemical Society
ACS Applied Electronic Materials

Phosphorus oxide (PO x ) capped by aluminum oxide (Al2O3) has recently been discovered to provide excellent surface passivation of crystalline silicon (c-Si). In this work, insights into the passivation mechanism of PO x /Al2O3 stacks are gained thro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58262df52e7dcdff21014dcd0be360e0
https://research.tue.nl/en/publications/fc38303c-27b6-4324-a715-5a7238ba5f3d

On the Accuracy of the Cox–Strack Equation and Method for Contact Resistivity Determination

Autor: G.J.M. Janssen, Raymond J. E. Hueting, Jimmy Melskens, Milou van Rijnbach, Jurriaan Schmitz, M.K. Stodolny

Publikováno v: IEEE Transactions on Electron Devices, 67(4):9031713, 1757-1763. Institute of Electrical and Electronics Engineers
IEEE Transactions on Electron Devices, 67(4):9031713, 1757-1763. IEEE

The Cox-Strack method is commonly applied to assess the contact resistivity between a metal and a semiconductor since the 1960s, while the underlying assumptions have not yet been rigorously assessed. In this article, a combination of finite-element

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa1fc9c918085dca8d34ff0678ceb998
https://doi.org/10.1109/ted.2020.2974194

Effects of a post deposition anneal on a tunneling Al2O3 interlayer for thermally stable MoOx hole selective contacts

Autor: Mike Tang Soo Kiong Ah Sen, Jimmy Melskens, Arthur Weeber

Publikováno v: SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ed3278df6c93939e33210d9fd7d3743b
https://doi.org/10.1063/5.0097779

Performance and thermal stability of an a-Si:H/TiOx/Yb stack as an electron-selective contact in silicon heterojunction solar cells

Autor: Wilhelmus M. M. Kessels, Maria Recaman Payo, Jimmy Melskens, Ivan Gordon, Jinyoun Cho, Hariharsudan Sivaramakrishnan Radhakrishnan, Maarten Debucquoy, Jozef Szlufcik, Jef Poortmans

Publikováno v: ACS Applied Energy Materials, 2(2), 1393-1404. American Chemical Society

© Copyright 2019 American Chemical Society. Low contact resistivity ( c ) and low recombination current density at the metallized area (J 0,metal ) are the key parameters for an electron-selective contact in solar cells, and an i-a-Si:H/TiO x /low w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bd4224605ac20277bf52fd90509008d
https://doi.org/10.1021/acsaem.8b01969