Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Jimmie J. Wortman"'
Autor:
N. Yang, Jimmie J. Wortman
Publikováno v:
Microelectronics Reliability. 41:37-46
This work examined various components of direct gate tunneling currents and analyzed reliability of ultrathin gate oxides (1.4–2 nm) in scaled n-metal-oxide-semiconductor field effective transistor (MOSFETs). Direct gate tunneling current component
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd9656b2cd39114ddcb5cad53a936b5a
https://doi.org/10.1016/s0026-2714(00)00099-8
https://doi.org/10.1016/s0026-2714(00)00099-8
Autor:
Jimmie J. Wortman, Eric M. Vogel, Veena Misra, N. Yang, J. Ganem, Jay Hauser, Pascal Masson, C.E. Weintraub
Publikováno v:
IEEE Transactions on Electron Devices. 48:2754-2762
The application of low-frequency charge pumping to obtain near-interface, or bulk trap densities, on thin stacked gate dielectrics is studied. A review of the theory governing the low-frequency charge pumping technique, developed to extract bulk trap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11cda22caf517c149ebc391799c01492
https://doi.org/10.1109/16.974700
https://doi.org/10.1109/16.974700
Publikováno v:
IEEE Transactions on Electron Devices. 47:1393-1400
Off-state leakage currents have been investigated for sub-100 nm CMOS technology. The two leakage mechanisms investigated in this work include conventional off-state leakage due to short channel effects and gate leakage through ultrathin gate oxides.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48f6837d59bc660cfb3a52306b9bf9f1
https://doi.org/10.1109/16.848282
https://doi.org/10.1109/16.848282
Publikováno v:
IEEE Transactions on Electron Devices. 47:1349-1354
In this work, five methods for measuring the thickness of ultra-thin gate oxide layers in MOS structures were compared experimentally on n/sup +/ poly-SiO/sub 2/-p-Si structures. Three methods are based on electrical capacitance-voltage (C-V) and cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f79a2eccefa2c44027d8e9495378bd4
https://doi.org/10.1109/16.848276
https://doi.org/10.1109/16.848276
Publikováno v:
IEEE Transactions on Electron Devices. 47:1636-1644
This work examines different components of leakage current in scaled n-MOSFET's with ultrathin gate oxides (1.4-2.0 nm). Both gate direct tunneling and drain leakage currents are studied by theoretical modeling and experiments, and their effects on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d86fe870aa3a2e9f9c80183b23f86bc4
https://doi.org/10.1109/16.853042
https://doi.org/10.1109/16.853042
Publikováno v:
Microelectronic Engineering. 48:211-214
This study reports on n-channel MOS transistors using very thin oxynitride gate dielectrics deposited by Low-Pressure Rapid Thermal Chemiical Vapor Deposition (LPRTCVD). The threshold voltage, the transconductance, the fast and slow trap densities, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb45cf1fa77f862d8564eca49756f368
https://doi.org/10.1016/s0167-9317(99)00372-x
https://doi.org/10.1016/s0167-9317(99)00372-x
Publikováno v:
IEEE Transactions on Electron Devices. 46:1464-1471
Using both quantum mechanical calculations for the silicon substrate and a modified WKB approximation for the transmission probability, direct tunneling currents across ultra-thin gate oxides of MOS structures have been modeled for electrons from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df1600bee133a6db8acb5ecfce2b1332
https://doi.org/10.1109/16.772492
https://doi.org/10.1109/16.772492
Autor:
B. Balland, Jimmie J. Wortman, Pascal Masson, Jean-Luc Autran, Eric M. Vogel, J Brini, P. Morfouli
Publikováno v:
Journal of Non-Crystalline Solids. 245:54-58
Slow traps and interface traps density has been measured using low frequency (10 Hz) noise and charge pumping measurements. The study has been carried out on n-channel metal-oxide-semiconductor transistors with ultra thin gate dielectrics prepared by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5107ac4d1e34ab96f521ee518d71efd0
https://doi.org/10.1016/s0022-3093(98)00870-9
https://doi.org/10.1016/s0022-3093(98)00870-9
A Low‐Thermal‐Budget In Situ Doped Multilayer Silicon Epitaxy Process for MOSFET Channel Engineering
Publikováno v:
Journal of The Electrochemical Society. 146:1189-1196
This paper describes an in situ boron‐doped, multilayer epitaxial silicon process that can be used to obtain doping profiles for channels in the deep‐submicron regime. We have extensively studied lightly doped channel structures in which an intri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab1ae39db0144312e9cbe1d1aaac5994
https://doi.org/10.1149/1.1391744
https://doi.org/10.1149/1.1391744
Autor:
Eric M. Vogel, Jay Hauser, W.K. Henson, Gerald Lucovsky, Khaled Ahmed, B.E. Hornung, P.K. McLarty, Jimmie J. Wortman
Publikováno v:
IEEE Transactions on Electron Devices. 45:1350-1355
The effect of dielectric constant and barrier height on the WKB modeled tunnel currents of MOS capacitors with effective oxide thickness of 2.0 nm is described. We first present the WKB numerical model used to determine the tunneling currents. The re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eb266f8d68e1a6e15158ee966dde0c8
https://doi.org/10.1109/16.678572
https://doi.org/10.1109/16.678572