Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Jim-Yong Chi"'
Publikováno v:
Journal of Applied Physics; 3/15/2005, Vol. 97 Issue 6, p064910, 4p, 2 Diagrams, 5 Graphs
Far-Field and Near-Field Distribution of GaN-Based Photonic Crystal LEDs With Guided Mode Extraction
Autor:
Chia-En Lee, Chia-Hsin Chao, Wen-Yung Yeh, Hsi-Hsuan Yen, Chun-Feng Lai, Hao-Chung Kuo, Jim-Yong Chi, Tien-Chang Lu
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 15:1234-1241
The near-field and far-field distribution of GaN LEDs with square photonic crystal (PhC) lattice are experimentally investigated. The optical images of the near-field pattern are obtained from the guided electroluminescent light generated at the cent
Publikováno v:
IEEE Transactions on Nanotechnology. 6:589-594
In this paper, we report that low-density InAs/GaAs quantum dots (QDs) can be formed by postgrowth annealing the samples with 1.5-monolayer (ML) InAs coverage, which is thinner than the critical layer thickness for the Stranski-Krastanov growth. The
Autor:
H. P. Yang, S. S. Mikhrin, M. V. Maksimov, V. M. Ustinov, V. G. Tikhomirov, A. R. Kovsh, A. G. Kuzmenkov, Nikolai A. Maleev, R. S. Hsiao, Nikolai N. Ledentsov, Gray Lin, A. V. Sakharov, S. A. Blokhin, Jim-Yong Chi
Publikováno v:
Semiconductors. 41:1224-1229
To suppress the generation of high-order modes in vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots, the method of formation of a spatially ordered array of etched holes in the upper distributed Bragg reflector was use
Autor:
T T Chen, Jyh-Shyang Wang, Y. F. Chen, Chih Ming Lai, Jenn-Fang Chen, Ying-Sheng Huang, R. S. Hsiao, Jim-Yong Chi
Publikováno v:
Semiconductor Science and Technology. 22:1077-1080
The wire-like characteristics of stacked InAs/GaAs quantum dot (QDs) superlattices induced by the vertically electronic coupling effect were demonstrated by surface photovoltaic and photoluminescence measurements. It was found that the surface photov
Autor:
J. Kwo, Y.N. Chiu, H.P. Yang, L.K. Chu, Jim-Yong Chi, Y.W. Chen, P. Chang, Minghwei Hong, P.J. Tsai
Publikováno v:
Journal of Crystal Growth. :1013-1016
Two depletion-mode GaAs-based metal-oxide-semiconductor field-effect transistor (MOSFETs) were made with molecular beam epitaxy (MBE) grown Ga 2 O 3 (Gd 2 O 3 ) as the gate dielectric on different channel structures. The depletion-mode GaAs MOSFETs w
Autor:
Fang-I Lai, R. S. Hsiao, Jim-Yong Chi, H. S. Wang, S. C. Wang, Yang-Fang Chen, Jyh-Shyang Wang, Shou-Yi Kuo, Chi-Te Liang, Hao-Chung Kuo
Publikováno v:
Journal of Crystal Growth. 291:27-33
The temperature dependence of optical properties of InGaAsN/GaAs single-quantum wells grown by solid source molecular beam epitaxy (MBE) with N contents varied from 0% to 5.3% was investigated by photoluminescence (PL). The evolution of the peak posi
Publikováno v:
Journal of Crystal Growth. 278:351-354
Ten-stacked InAs/GaAs quantum-dot infrared photodetector with two Al 0.1 Ga 0.9 As blocking layers at both sides of the structure is investigated. High responsivity 1.73 A/W under low applied voltage of –1.4 V is observed at 20 K with peak waveleng
Autor:
C.Y. Chang, G. Lin, K.M. Kong, E.Y. Lin, Jyh-Shyang Wang, L. P. Chen, Jim-Yong Chi, Tsong-Sheng Lay, T.Y. Chang
Publikováno v:
Journal of Crystal Growth. 278:575-579
The optical and carrier transport properties of In 0.38 GaAsN x /GaAs single-quantum-well diode laser structures of x ranging from 3% to 3.8% were investigated by temperature-dependent photoluminescence (PL) spectroscopy, photocurrent spectroscopy, d
Autor:
J. P. Mannaerts, H. Y. Lee, Minghwei Hong, J. Kwo, Y.-F. Hsieh, Cheng‐Hsien Chen, Jim-Yong Chi, Yu Huang, Shih-Yen Lin, H.M. Cheng
Publikováno v:
Journal of Crystal Growth. 278:638-642
Single-crystal single-domain Sc 2 O 3 films have been epitaxially grown on Si (1 1 1) using molecular beam epitaxy (MBE) techniques. The Sc 2 O 3 films have the bulk bixbyite cubic phase with a very uniform thickness, a structural perfection, and a s