Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Jim-Shone Chen"'
Autor:
Ming-Hsien Lee, Ting-Chang Chang, Ying-Chung Chen, Ying-Shao Chuang, Fu-Yen Jian, Ya-Hsiang Tai, Jim-Shone Chen, Hung-Wei Li, Te-Chih Chen, Shih-Ching Chen, Chia-Sheng Lin
Publikováno v:
IEEE Electron Device Letters. 32:321-323
This letter investigates the charge-trapping-induced parasitic resistance and capacitance in silicon-oxide nitride-oxide-silicon thin-film transistors under positive and negative dc bias stresses. The results identify a parasitic capacitance in OFF-s
Autor:
Ming-Hsien Lee, Ting-Chang Chang, Chia-Sheng Lin, Jim-Shone Chen, Hung Wei Li, Fu-Yen Jian, Ching-Chieh Shih, Tien-Yu Hsieh, Shih-Ching Chen, Te-Chih Chen
Publikováno v:
IEEE Electron Device Letters. 31:1413-1415
This letter investigates the degradation mechanism of polycrystalline silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon structure under off -state stress. During the electrical stress, the hot hole generated from band-to-band t
Autor:
Hung-Chang Sun, Ting-Yun Wu, Yen-Ting Chen, Chee-Wee Liu, Ching-Fang Huang, Jim-Shone Chen, Yuan-Jun Hsu
Publikováno v:
IEEE Electron Device Letters. 31:1125-1127
A capacitorless single-transistor (1T) memory cell with a long data-retention time is demonstrated on polycrystalline silicon thin-film transistors (TFTs). A new operation mode using channel traps is employed to modulate the drain current in the accu
Autor:
Chia-Sheng Lin, Ching-Chieh Shih, Jim-Shone Chen, Shih-Ching Chen, Ming-Hsien Lee, Ting-Chang Chang, Fu-Yen Jian, Te-Chih Chen
Publikováno v:
IEEE Electron Device Letters. 30:834-836
This letter studies the nonvolatile memory characteristics of polycrystalline-silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon (SONOS) structure. As the device was programmed, significant trap-assisted gate-induced drain leaka
Autor:
Hung-Chang Sun, Yuan-Jun Hsu, Ching-Chieh Shih, Yen-Ting Chen, Jim-Shone Chen, Ying-Jhe Yang, Chee-Wee Liu, Chun-Yuan Ku, Ching-Fang Huang
Publikováno v:
IEEE Electron Device Letters. 30:368-370
The dynamic stress switching of p-channel polycrystalline-silicon (poly-Si) thin-film transistors from full depletion to accumulation bias creates the high electric field near source/drain (S/D) junctions due to the slow formation of the accumulated
Autor:
Ching-Fang Huang, P.-S. Kuo, Chee-Wee Liu, Jim-Shone Chen, Yuan-Jun Hsu, Hung-Chang Sun, Yen-Ting Chen
Publikováno v:
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
The impact ionization that occurred near channel-S/D junctions is responsible for the dynamic bias temperature instability (BTI) of p-channel poly-Si thin-film transistors (TFTs). Impact ionization is induced by lateral electric field when gate volta
Publikováno v:
Journal of materials science. Materials in medicine. 9(5)
Modification of ethyl alcohol added aqueous electrolyte for depositing calcium phosphate on titanium substrates by a electrocrystallization method is described. Film coated in the electrolyte with ethyl alcohol addition is more homogeneous and the gr
Autor:
Jenn-Gwo Hwu, Jim-Shone Chen
Publikováno v:
IEEE Electron Device Letters. 11:82-84
Improvement of the SiO/sub 2//Si interface degradation due to hot-electron injections from silicon by repeated irradiation-then-anneal treatments is described. Each treatment includes an irradiation of Co-60 with a total dose of 10/sup 6/ rd (SiO/sub
Autor:
Ching-Chieh Shih, Chia-Sheng Lin, Shih-Ching Chen, An-Kuo Chu, Hung Wei Li, Ming-Hsien Lee, Ting-Chang Chang, Jim-Shone Chen, Te-Chih Chen, Fu-Yen Jian
Publikováno v:
Electrochemical and Solid-State Letters. 13:H95
This article investigates the threshold voltage (V t ) shift induced by a self-heating effect for n-channel low temperature poly-Si thin film transistors (TFTs) and finds that there is a shift of more than 3 V in the negative direction after a self-h
Autor:
Chia-Tien Peng, Chi-Mao Hung, Hung-Wei Tseng, Wei-Ming Huang, Wan-Yi Liu, An-Thung Cho, Shin-Shueh Chen, Ming-Hsien Lee, Chung-Hong Kuo, Yu‐Hua Wu, Min‐Wei Sun, Chun-Huai Li, Jim-Shone Chen
Publikováno v:
SID Symposium Digest of Technical Papers. 41:319
We have developed a new AMLCD with multiple ambient light sensors (ALSs) for reducing backlight (BL) power consumption, and false sensing of ambient illuminance. ALSs perform well in showing BL control for power-saving, even though one of the sensors