Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Jim Thackeray"'
Autor:
Nico Voelcker, Marek Jasieniak, Jim Thackeray, Meiliana Siauw, David Valade, Ke Du, Idriss Blakey, Peter Trefonas, Andrew K. Whittaker
Publikováno v:
SPIE Proceedings.
Out of band (OOB) radiation from the EUV source has significant implications for the performance of EUVL photoresists. Here we introduce a surface-active polymer additive, capable of partitioning to the top of the resist film during casting and annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6247ddd61ce9dc64a6607f640ea08a0
https://doi.org/10.1117/12.2270480
https://doi.org/10.1117/12.2270480
Autor:
Mike Sakillaris, Michael P. Tate, Michael Kaufman, Charlotte Cutler, Carol Mohler, Thomas Estelle, Jim Thackeray, Christopher J. Tucker
Publikováno v:
SPIE Proceedings.
Understanding fundamental properties of photoresists and how interactions between photoresist components affect performance targets are crucial to the continued success of photoresists. More specifically, polymer solubility is critical to the overall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef9236b16706ddb5fc5347f2a89ec8a7
https://doi.org/10.1117/12.2045974
https://doi.org/10.1117/12.2045974
Autor:
Jim Thackeray, Dung Quach, David Valeri, Amy Kwok, Michael Wagner, Owendi Ongayi, Vipul Jain, James F. Cameron, Suzanne Coley
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
In this paper, we will describe some of our efforts on various leaving group designs and their impacts on resist performance, mainly focusing on the leaving group polarity, activation energy and molecular volume. The EUV lithographic performances of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74776422be808d472e3e5af2b01d2e92
https://doi.org/10.1117/12.2011600
https://doi.org/10.1117/12.2011600
Autor:
Debra Fenzel-Alexander, Don Hofer, Hiroshi Ito, Greg Breyta, Pete Hagerty, R. A. Dipietro, Ron Nunes, Will Conley, Jim Thackeray, S. Holmes
Publikováno v:
Journal of Photopolymer Science and Technology. 9:557-572
A production-worthy deep UV resist system built on the ESCAP platform is described. The resist consists of a thermally and hydrolytically stable resin and acid generator and thus can be heated at high temperatures forfree volume reduction, which prov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fce82346f7288d945f45381b467dc36b
https://doi.org/10.2494/photopolymer.9.557
https://doi.org/10.2494/photopolymer.9.557
Autor:
Kim Y. Lee, Wu-Song Huang, Mahmoud Khojasteh, R. Sooriyakumaran, Mark D. Denison, Dominic Changwon Yang, James F. Cameron, Roger F. Sinta, George W. Orsula, George Joseph Hefferon, Ahmad D. Katnani, Rao Bantu, Ranee Kwong, Jim Thackeray, Bill Brunsvold
Publikováno v:
Journal of Photopolymer Science and Technology. 8:525-534
An environmentally stable resist with high contrast, sensitivity and resolution is presented. Delay stability in excess of 24hr. has been achieved with insignificant change in linewidth. The resist also demonstrates extreme insensitivity to PEB, show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f223b2c3e7c7200a31d5c1626f1d800f
https://doi.org/10.2494/photopolymer.8.525
https://doi.org/10.2494/photopolymer.8.525
Autor:
David Valeri, Owendi Ongayi, Michael Wagner, Marie Hellion, Claire Sourd, James F. Cameron, Vipul Jain, Paul J. LaBeaume, B. Icard, Amy Kwok, Bernard Dalzotto, Jin Wuk Sung, Laurent Pain, Suzanne Coley, Jim Thackeray
Publikováno v:
SPIE Proceedings.
Prompted by the fact that the International Technology Roadmap for Semiconductors (ITRS) has declared no proven optical solutions are available for sub 22nm hp patterning, we have investigated e-Beam and Extreme Ultraviolet (EUV) resist performance w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::624ef28d36e0dfb347365975357fdffb
https://doi.org/10.1117/12.916598
https://doi.org/10.1117/12.916598
Autor:
Michael Wagner, James F. Cameron, David Valeri, Amy Kwok, Matthew D. Christianson, Matthew M. Meyer, Suzanne Coley, Jim Thackeray, Owendi Ongayi
Publikováno v:
SPIE Proceedings.
Resolution, line edge roughness, sensitivity and low outgassing are the key focus points for extreme ultraviolet (EUV) resist materials. Sensitivity has become increasingly important so as to address throughput concerns in device manufacturing and co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e5d3464bebe74dc5f65eb6d669e59c7
https://doi.org/10.1117/12.916482
https://doi.org/10.1117/12.916482
Autor:
George W. Orsula, Jim Thackeray, M.M. Rajaratnam, Gary S. Calabrese, Angelo A. Lamola, Mary Tedd Allen, Roger F. Sinta
Publikováno v:
Journal of Photopolymer Science and Technology. 4:379-387
This paper describes further developments of Acid Hardened Resist (AHR) systems, with particular focus on the DUV and i-line AHR resist performance. Results regarding the time delay between exposure and post-exposure bake are given for Megaposit®SNR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91cafeca99afd2e53a0b2dd5e0ae9e89
https://doi.org/10.2494/photopolymer.4.379
https://doi.org/10.2494/photopolymer.4.379
Autor:
Cecilia Montgomery, Richard J. Matyi, Charles R. Szmanda, Robert L. Brainard, Elsayed Hassanein, Craig Higgins, Alin Antohe, Kim Dean, Andrew C. Rudack, Dimitra Niakoula, Gregg M. Gallatin, Andy Ma, Patrick P. Naulleau, Emil Piscani, Matt Malloy, Kathleen Spear, Anwar Khurshid, Jim Thackeray, Gregory Denbeaux, Jeff D. Byers, Christopher N. Anderson
Publikováno v:
SPIE Proceedings.
Base titration methods are used to determine C-parameters for three industrial EUV photoresist platforms (EUV- 2D, MET-2D, XP5496) and twenty academic EUV photoresist platforms. X-ray reflectometry is used to measure the density of these resists, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4fa19464a658be4137a54b90bb01830
https://doi.org/10.1117/12.774099
https://doi.org/10.1117/12.774099
Autor:
Robert L. Brainard, Kim Dean, Kathleen Spear, Gregg M. Gallatin, Patrick P. Naulleau, Dimitra Niakoula, Richard J. Matyi, Elsayed Hassanein, Jim Thackeray
Publikováno v:
SPIE Proceedings.
Recent experimental results and modeling both indicate that whereas it is possible to optimize a photoresist and process to achieve separately a desired resolution or line edge roughness or sensitivity, it will be difficult if not impossible to achie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe4290619c536fcbf9d14cbc52e83ae5
https://doi.org/10.1117/12.772763
https://doi.org/10.1117/12.772763