Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jim S. Williams"'
Autor:
Tuan T. Tran, Jennifer Wong-Leung, Lachlan A. Smillie, Anders Hallén, Maria G. Grimaldi, Jim S. Williams
Publikováno v:
APL Materials, Vol 11, Iss 4, Pp 041115-041115-7 (2023)
Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical conductivity is thoug
Externí odkaz:
https://doaj.org/article/e9406f6c3aea454bbbe93b91074742fe
Autor:
Sashini Senali Dissanayake, Nicole O. Pallat, Philippe K. Chow, Shao Qi Lim, Yining Liu, Qianao Yue, Rhoen Fiutak, Jay Mathews, Jim S. Williams, Jeffrey M. Warrender, Meng-Ju Sher
Publikováno v:
APL Materials, Vol 10, Iss 11, Pp 111106-111106-9 (2022)
Incorporating ultrahigh concentrations of deep-level dopants in silicon drastically alters silicon’s optoelectronic properties. Photodiodes built from silicon hyperdoped with gold extend light sensitivity into the shortwave infrared region, far bey
Externí odkaz:
https://doaj.org/article/6e1b805bb0674c508a0b3b076b1d40c6
Autor:
Sashini Senali Dissanayake, Philippe K Chow, Shao Qi Lim, Wenjie Yang, Rhoen Fiutak, Jim S Williams, Jeffrey M Warrender, Meng-Ju Sher
Publikováno v:
Semiconductor Science and Technology. 38:024003
In recent years, infrared photodetectors using silicon hyperdoped with deep-level dopants started to demonstrate extended light detection beyond the silicon’s absorption edge. The reported responsivities or external quantum efficiencies, however, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::170068f5d86c59213db605f0e3c9b90f
https://doi.org/10.1088/1361-6641/acac4c
https://doi.org/10.1088/1361-6641/acac4c
