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pro vyhledávání: '"Jim Parkin"'
Autor:
Keith Heppenstall, Ian Kennedy, Philip Rutter, Olayiwola Alatise, Jim Parkin, Khalid Khan, Adrian Koh, George Petkos
Publikováno v:
IEEE Transactions on Electron Devices. 57:1651-1658
The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed. Trench power nMOSFETs with 20- and 30-V breakdown voltage
Autor:
Keith Heppenstall, Ian Kennedy, George Petkos, Adrian Koh, Phil Rutter, Olayiwola Alatise, Khalid Khan, Jim Parkin
Publikováno v:
IEEE Electron Device Letters. 31:713-715
Threshold voltage reduction from hot-hole injection during repetitive unclamped inductive switching is investigated in low-voltage discrete power trench nMOSFETs with different trench depths. Power nMOSFETs with 21 mm2 of active area, breakdown volta
Autor:
Adrian Koh, George Petkos, Phil Rutter, Olayiwola Alatise, Ian Kennedy, Khalid Khan, Keith Heppenstall, Jim Parkin
Publikováno v:
2010 Proceedings of the European Solid State Device Research Conference.
Low voltage discrete power trench n-MOSFETs in TO-220 packages have been subjected to over 200 million cycles of repetitive unclamped inductive switching (UIS) at a mounting base temperature of 150° C and at different avalanche currents. Hot-hole in
Autor:
Jim Parkin
Publikováno v:
Geoforum. 23:467-475
It is suggested that the use of multiattribute or multicriteria methods for project evaluation in the environmental impact assessment procedure presents the decision-makers with too little information for a final political judgment. To correct this s