Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Jill Becker"'
Publikováno v:
Nature and Science of Sleep.
Monica M Shieu,1 Tiffany J Braley,1 Jill Becker,2 Galit Levi Dunietz1 1Neurology, Medical School, University of Michigan, Ann Arbor, MI, USA; 2Psychology, Medical School, University of Michigan, Ann Arbor, MI, USACorrespondence: Monica M Shieu, Divis
Publikováno v:
Sleep. 45:A26-A27
Introduction Menopause is related to major hormonal, physical, and psychological changes for women, each of which could influence their sleep. However, sleep in women post-menopause may differ by race and ethnicity. We aimed to examine associations b
Autor:
Sara Goek, Jill Becker
Publikováno v:
College & Research Libraries. 81
In 2009, responding to a new level of challenges to academic libraries brought on by the recession, the Association of College and Research Libraries (ACRL) created the Value of Academic Libraries (VAL) initiative and allocated funding for a systemat
Autor:
Jill Becker Feigeles
Publikováno v:
New Directions in Treatment, Education, and Outreach for Mental Health and Addiction ISBN: 9783319727776
Social work has a unique opportunity to integrate evidence-based substance abuse screening interventions such as screening, brief intervention, and referral to treatment (SBIRT) into master-level MSW education. Development of curricula for teaching f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebeda9d2e4f9486e797524dac660ae4f
https://doi.org/10.1007/978-3-319-72778-3_18
https://doi.org/10.1007/978-3-319-72778-3_18
Publikováno v:
Accountability in Research. 21:143-158
In this mixed-method study of education in the responsible conduct of research (RCR) in psychology, phase one survey respondents (n = 141) reported that faculty and students were familiar with RCR standards and procedures to educate them were believe
Publikováno v:
ECS Transactions. 41:219-225
Atomic layer deposition of aluminum nitride on Si wafers using tris(dimethylamido)aluminum and ammonia has been investigated in the temperature range from 180 to 400°C. Saturated growth behavior not observed with NH3 pulsed in continuous mode has be
Autor:
A. Mouti, Bernd Schmidt, Pascal Normand, S. Schamm, G. Ben Assayag, V. Ioannou-Sougleridis, Panagiotis Dimitrakis, Caroline Bonafos, Jill Becker
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2009, 86 (7-9), pp.1838-1841. 〈10.1016/j.mee.2009.03.074〉
Microelectronic Engineering, Elsevier, 2009, 86 (7-9), pp.1838-1841. ⟨10.1016/j.mee.2009.03.074⟩
Microelectronic Engineering, 2009, 86 (7-9), pp.1838-1841. ⟨10.1016/j.mee.2009.03.074⟩
Microelectronic Engineering, Elsevier, 2009, 86 (7-9), pp.1838-1841. 〈10.1016/j.mee.2009.03.074〉
Microelectronic Engineering, Elsevier, 2009, 86 (7-9), pp.1838-1841. ⟨10.1016/j.mee.2009.03.074⟩
Microelectronic Engineering, 2009, 86 (7-9), pp.1838-1841. ⟨10.1016/j.mee.2009.03.074⟩
International audience; Structural and electrical properties of ALD-grown 5 and 7 nm-thick Al2O3 layers before and after implantation of Ge ions (1 keV, 0.5–1 × 1016 cm−2) and thermal annealing at temperatures in the 700–1050 °C range are rep
Publikováno v:
ECS Transactions. 16:19-27
The growing adoption of Atomic Layer Deposition (ALD), as a means of producing highly uniform, and conformal thin films, has paved the way for its use in an array of extremely important emergent technologies. This in turn has influenced the design an
Autor:
Jill Becker, Douwe J. Monsma
Publikováno v:
ECS Transactions. 11:39-44
Cambridge NanoTech has sold more than 70 atomic layer deposition (ALD) systems in the last 3 years. These turn-key and affordable systems have enabled researchers both in personal and multi-user cleanroom environments to introduce ALD to a wide range