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pro vyhledávání: '"Jiin Shung Wang"'
Autor:
Jiin-Shung Wang, 王錦雄
88
The electrical and optical characteristics of GaAs-based strained quantum well and quantum dots have been investigated in this dissertation. In the case of compressed strain, the GaAs/InAs/GaAs quantum dots with the InAs thickness varying fro
The electrical and optical characteristics of GaAs-based strained quantum well and quantum dots have been investigated in this dissertation. In the case of compressed strain, the GaAs/InAs/GaAs quantum dots with the InAs thickness varying fro
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/38166956563174463258
Publikováno v:
Japanese Journal of Applied Physics. 39:1102
Capacitance dispersion over frequency is investigated for relaxed In0.2Ga0.8As/GaAs Schottky diodes. While the high-frequency capacitance is voltage-independent, the low-frequency capacitance is seen to decrease with reverse voltage. Based on a Schot
Publikováno v:
Japanese Journal of Applied Physics. 38:L1425
The electrical properties of annealed low-temperature GaAs are studied by investigating the frequency-dependent capacitance of n-LT-i-p structures with the low-temperature (LT) layers grown at different temperatures. Relative to the sample grown at 6
Publikováno v:
Japanese Journal of Applied Physics. 38:6421
Admittance spectroscopy is used to study a low-temperature (LT)-grown relaxed In0.12Ga0.88As/GaAs p-i-n superlattice. The capacitance-frequency spectra show two step-like trapping effects which are explained by the existence of two traps (E a=0.73 eV
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