Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Jihen Jridi"'
Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy
Autor:
Vladimir G. Dubrovskii, Evelyne Gil, Hadi Hijazi, Dominique Castelluci, Jihen Jridi, Catherine Bougerol, Agnès Trassoudaine, Yamina André, Mohammed Zeghouane
Publikováno v:
Nanotechnology
Nanotechnology, 2021, 32 (15), pp.155601. ⟨10.1088/1361-6528/abdb16⟩
Nanotechnology, Institute of Physics, 2021, 32 (15), pp.155601. ⟨10.1088/1361-6528/abdb16⟩
Nanotechnology, 2021, 32 (15), pp.155601. ⟨10.1088/1361-6528/abdb16⟩
Nanotechnology, Institute of Physics, 2021, 32 (15), pp.155601. ⟨10.1088/1361-6528/abdb16⟩
Controlled growth of In-rich InGaN nanowires/nanorods (NRs) has long been considered as a very challenging task. Here, we present the first attempt to fabricate InGaN NRs by selective area growth using hydride vapor phase epitaxy. It is shown that In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c25094d50f539b3bece2f21017fd1876
https://hal.uca.fr/hal-03137206/document
https://hal.uca.fr/hal-03137206/document
Autor:
Agnès Trassoudaine, Dominique Castelluci, Geoffrey Avit, Catherine Bougerol, Jihen Jridi, Philip A. Shields, Pierre Ferret, Evelyne Gil, Mohammed Zeghouane, Yamina André, Vladimir G. Dubrovskii, Pierre-Marie Coulon
Publikováno v:
Zeghouane, M, André, Y, Avit, G, Jridi, J, Bougerol, C, Coulon, P, Ferret, P, Castelluci, D, Gil, E, Shields, P, Dubrovskii, V G & Trassoudaine, A 2020, ' Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates ', Nano Futures, vol. 4, no. 2, 025002, pp. 1-7 . https://doi.org/10.1088/2399-1984/ab8450
Nano Futures
Nano Futures, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Nano Futures, IOPScience, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Nano Futures
Nano Futures, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Nano Futures, IOPScience, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy on patterned GaN/c-Al 2 O 3 templates. It is shown that these voids shape, due to a high lattice mis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1904517e67607397c508259c3a51787
https://purehost.bath.ac.uk/ws/files/205005931/NANOF_100268_.pdf
https://purehost.bath.ac.uk/ws/files/205005931/NANOF_100268_.pdf