Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jie-Long Liu"'
Autor:
Peng-Fei Wang, Min-Han Mi, Xiang Du, Yu-Wei Zhou, Jie-Long Liu, Zhi-Hong Chen, Si-Rui An, Yi-Lin Chen, Jie-Jie Zhu, Xue-Feng Zheng, Xiao-Hua Ma, Yue Hao
Publikováno v:
Applied Physics Letters. 121:072110
In this work, a high linearity AlGaN/GaN HEMT integrated dual threshold coupling (DT) technology and Schottky–Ohmic drain (SOD) were fabricated and analyzed. Since the architecture of DT synthesized planar- and recess-HEMT periodically along the ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa77fe6199bd64e98f15ff860d4ef41c
https://doi.org/10.1063/5.0096542
https://doi.org/10.1063/5.0096542
Autor:
Peng-Fei Wang, Min-Han Mi, Meng Zhang, Qing Zhu, Jie-Jie Zhu, Yu-Wei Zhou, Jun-Wen Chen, Yi-Lin Chen, Jie-Long Liu, Ling Yang, Bin Hou, Xiao-Hua Ma, Yue Hao
Publikováno v:
Applied Physics Letters. 120:102103
In this work, ultrathin barrier (∼6 nm) AlGaN/GaN high-electron-mobility transistors (HEMTs) with in situ SiN gate dielectric and slant-field plate (SFP) T-gates were fabricated and analyzed. Since the proposed scheme of gate dielectric and SFP eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7e804b7396c6f0bc7f7c84bde9c1a6a
https://doi.org/10.1063/5.0080320
https://doi.org/10.1063/5.0080320
Autor:
Jie-Long Liu, Jie-Jie Zhu, Min-Han Mi, Qing Zhu, Si-Yu Liu, Peng-Fei Wang, Yu-Wei Zhou, Zi-Yue Zhao, Jiu-Ding Zhou, Meng Zhang, Mei Wu, Bin Hou, Hong Wang, Ling Yang, Xiao-Hua Ma, Yue Hao
Publikováno v:
Applied Physics Letters. 120:052101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed3476008ce3174bbac095f176298011
https://doi.org/10.1063/5.0080120
https://doi.org/10.1063/5.0080120