Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Jie-Jie Zhu"'
Autor:
Ye-Nan Bie, Cheng-Lin Du, Xiao-Long Cai, Ran Ye, Hai-Jun Liu, Yu Zhang, Xiang-Yang Duan, Jie-Jie Zhu
Publikováno v:
Crystals, Vol 12, Iss 9, p 1195 (2022)
In the current study, the effects of cracks in source field plates (SFPs) on the electrical performance of AlGaN/GaN high electron mobility transistors (HEMTs) are investigated systematically using numerical simulation. In detail, the influence of cr
Externí odkaz:
https://doaj.org/article/da99d0a206f64ddcb6d310f5fc0e6110
Publikováno v:
AIP Advances, Vol 4, Iss 3, Pp 037108-037108-7 (2014)
Trap states in Al0.55Ga0.45N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time cons
Externí odkaz:
https://doaj.org/article/5f33c81c53644643a1872b600ec9d627
Publikováno v:
Physica A: Statistical Mechanics and its Applications. 521:293-309
We study the model of an electron in an isotropic quantum dot in the presence of a perpendicular magnetic field and dissipation. Starting from the system plus bath approach, the quantum Langevin equations are first obtained and consequently the equat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e711a0e5bba5b7a9c463077d70653243
https://doi.org/10.1016/j.physa.2019.01.070
https://doi.org/10.1016/j.physa.2019.01.070
Autor:
Peng-Fei Wang, Min-Han Mi, Xiang Du, Yu-Wei Zhou, Jie-Long Liu, Zhi-Hong Chen, Si-Rui An, Yi-Lin Chen, Jie-Jie Zhu, Xue-Feng Zheng, Xiao-Hua Ma, Yue Hao
Publikováno v:
Applied Physics Letters. 121:072110
In this work, a high linearity AlGaN/GaN HEMT integrated dual threshold coupling (DT) technology and Schottky–Ohmic drain (SOD) were fabricated and analyzed. Since the architecture of DT synthesized planar- and recess-HEMT periodically along the ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa77fe6199bd64e98f15ff860d4ef41c
https://doi.org/10.1063/5.0096542
https://doi.org/10.1063/5.0096542
Autor:
Peng-Fei Wang, Min-Han Mi, Meng Zhang, Qing Zhu, Jie-Jie Zhu, Yu-Wei Zhou, Jun-Wen Chen, Yi-Lin Chen, Jie-Long Liu, Ling Yang, Bin Hou, Xiao-Hua Ma, Yue Hao
Publikováno v:
Applied Physics Letters. 120:102103
In this work, ultrathin barrier (∼6 nm) AlGaN/GaN high-electron-mobility transistors (HEMTs) with in situ SiN gate dielectric and slant-field plate (SFP) T-gates were fabricated and analyzed. Since the proposed scheme of gate dielectric and SFP eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7e804b7396c6f0bc7f7c84bde9c1a6a
https://doi.org/10.1063/5.0080320
https://doi.org/10.1063/5.0080320
Autor:
Jie-Long Liu, Jie-Jie Zhu, Min-Han Mi, Qing Zhu, Si-Yu Liu, Peng-Fei Wang, Yu-Wei Zhou, Zi-Yue Zhao, Jiu-Ding Zhou, Meng Zhang, Mei Wu, Bin Hou, Hong Wang, Ling Yang, Xiao-Hua Ma, Yue Hao
Publikováno v:
Applied Physics Letters. 120:052101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed3476008ce3174bbac095f176298011
https://doi.org/10.1063/5.0080120
https://doi.org/10.1063/5.0080120
Autor:
Yu-Shan Lin, Yi-Lin Chen, Ting-Chang Chang, Fong-Min Ciou, Qing Zhu, Mao‐Chou Tai, Wan-Ching Su, Ting-Tzu Kuo, Kuan-Hsu Chen, Jie-Jie Zhu, Min-Han Mi, Xiao-Hua Ma, Yue Hao
Publikováno v:
Semiconductor Science and Technology. 37:025017
In this work, a two-step degradation phenomenon in D-mode Si3N4/AlGaN/GaN metal–insulator–semiconductor-high electron mobility transistors is discussed systematically. During off-state stress, threshold voltage shifts positively for a short durat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e6ed4215b79049a01f2a5cd4e54ab6
https://doi.org/10.1088/1361-6641/ac4404
https://doi.org/10.1088/1361-6641/ac4404
Autor:
Tu-Nan Ruan, Jie-Jie Zhu
Publikováno v:
Physical Review D. 57:5468-5472
We analyze the decay amplitudes of the process ${a}_{2}(1320)\ensuremath{\rightarrow}{\ensuremath{\pi}}^{+}{\ensuremath{\pi}}^{+}{\ensuremath{\pi}}^{\ensuremath{-}}$ using the tensor analysis technique and show how to obtain three-body amplitudes. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc6454d2d128acf460352f26b7daf50f
https://doi.org/10.1103/physrevd.57.5468
https://doi.org/10.1103/physrevd.57.5468
Publikováno v:
Physical Review D. 54:6963-6969
A scheme, the so-called {open_quote}{open_quote}projection,{close_quote}{close_quote} for handling singularities in processes such as {ital e}{sup +}{ital e}{sup {minus}}{r_arrow}{ital t{bar b}e{sup {minus}}}{bar {nu}} (or {ital e}{sup +}{ital e}{sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48542be8f17d988ecb4867e4766e9dc1
https://doi.org/10.1103/physrevd.54.6963
https://doi.org/10.1103/physrevd.54.6963
Publikováno v:
Physical Review D. 77
In this work, we consider the canonical charmonium assignments for $Y(4360)$ and $Y(4660)$. $Y(4660)$ is a good candidate of $5^{3}S_{1}$ $c\overline{c}$ state, the possibility of $Y(4360)$ as a $3^{3}D_{1}$ $c\overline{c}$ state is studied, and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::467d10abf06da3e17cdd318d4a93ab89
https://doi.org/10.1103/physrevd.77.014033
https://doi.org/10.1103/physrevd.77.014033