Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Jiazhzhi Duan"'
Autor:
Hong Liu, Ye Tian, Yu Zhang, Jianfeng Jiang, Jiazhzhi Duan, Qiqiang Li, Lin Han, Xianjin Feng, Tian-Ling Ren, Yutao Li, Haotian Zheng, Jingxin Li, Linshen Li, Zhihua Zong
Publikováno v:
npj 2D Materials and Applications, Vol 3, Iss 1, Pp 1-8 (2019)
Among two-dimensional layered semiconductors, indium selenide (InSe) is one of the most promising materials with absolute advantages in field-effect transistors (FETs) because of its high electron mobility and stable material properties. Some work ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fadda561ebe6378d58973aaf017df4cd
http://link.springer.com/article/10.1038/s41699-019-0110-x
http://link.springer.com/article/10.1038/s41699-019-0110-x
