Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Jiazhzhi Duan"'
Autor:
Hong Liu, Ye Tian, Yu Zhang, Jianfeng Jiang, Jiazhzhi Duan, Qiqiang Li, Lin Han, Xianjin Feng, Tian-Ling Ren, Yutao Li, Haotian Zheng, Jingxin Li, Linshen Li, Zhihua Zong
Publikováno v:
npj 2D Materials and Applications, Vol 3, Iss 1, Pp 1-8 (2019)
Among two-dimensional layered semiconductors, indium selenide (InSe) is one of the most promising materials with absolute advantages in field-effect transistors (FETs) because of its high electron mobility and stable material properties. Some work ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fadda561ebe6378d58973aaf017df4cd
http://link.springer.com/article/10.1038/s41699-019-0110-x
http://link.springer.com/article/10.1038/s41699-019-0110-x
Autor:
Jiang, Jianfeng, Li, Jingxin, Li, Yutao, Duan, Jiazhzhi, Li, Linshen, Tian, Ye, Zong, Zhihua, Zheng, Haotian, Feng, Xianjin, Li, Qiqiang, Liu, Hong, Zhang, Yu, Ren, Tian-Ling, Han, Lin
Publikováno v:
NPJ 2D Materials & Applications; 7/30/2019, Vol. 3 Issue 1, pN.PAG-N.PAG, 1p